Abstract:Silicon Carbide (SiC) is becoming increasingly of interest to the power electronics industry due to its superior characteristics such as high critical electric field, larger bandgap and higher thermal conductivity in comparison to Silicon (Si). Taking advantage of these material properties, high voltage devices could be fabricated with lower power losses and high temperature and frequency operability, which could surpass the limits enforced by Si power devices. SiC BJTs in particular are advantageous for the medium to high-voltage application range (e.g. HVDC multi-level converters) as they exhibit lower on-state losses while maintaining superior switching performance. The only drawback is being a current driven device in contrast to voltage-controlled SiC MOSFETs. Therefore, devices with a large current gain (β) are highly desirable for simplifying the base drive. In this paper, a novel circular structure with improved β has been demonstrated. Although the material quality of epilayers and surface passivation layer are the most significant factors limiting β, the geometrical design also plays a vital role in achieving a higher β. Therefore, the influence of the emitter geometry on β and the Rittner effect have been discussed by comparing rectangular and circular cell structures, with the aid of the software Sentaurus TCAD.

Static and dynamic characterization of silicon carbide bipolar junction transistor

Novel 4H-SiC bipolar junction transistor (BJT) with improved current gain

A Novel High-Voltage Trench Gate Insulated Gate Bipolar Transistor With Diffusion Remnant Layer

Theoretical prediction of the performance of Si and SiC bipolar transistors operating at high temperatures

Numerical and Experimental Investigation on Bipolar Operation of 4H-SIC Normally-on Vertical JFETs

Bidirectional Current 4h‐sic VJFET

SiC BJT minimizes losses in alternative energy applications

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

Static and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power Switches

A High-Speed Si-Based Power Transistor With Bipolar-Assisted Gate Discharging Behavior

SiC devices parameters effects on the electrical behaviour of mCascode switch

Electrothermal Model of SiC Power BJT

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Modeling of a 1200 V 6 a SiC bipolar junction transistor

Characterization of 1.2 Kv SiC Super-Junction SBD Implemented by Trench and Implantation Technique

Transient analysis of Si-MOS and SiC-JFET cascode power switches

A Novel 4H-Sic Lateral Bipolar Junction Transistor Structure with High Voltage and High Current Gain

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

Design and Characterization of 10 kV High Voltage 4H-SiC p-Channel IGBTs with Low VF

3kV 6.7mΩ·cm2 4H-SiC BJT with An Effective Junction Termination Extension (JTE)