Abstract:The ability of Ultra-Thin-Body (UTB) MOS devices to enable channel length scaling can only be realistically assessed by accurately taking key physical effects such as Quantum Confinement effects (QCEs) and Short channel effects (SCEs) into account. QCEs can accurately be considered only through a full band structure-based approach, which tends to be computationally inefficient, particularly at higher channel thicknesses, and is further exacerbated when required to be used to calculate 2-D channel electrostatics. Therefore, in this work, we propose a methodology to efficiently simulate the channel electrostatics of a UTB Double Gate MOSFET by solving the 1-D band structure with the 2-D Poisson's equation self consistently, determined by using the semi-empirical tight-binding approach only over those k-points that are likely to have a significant effect on the electrostatics. By showing that determining the 1-D Band structure at the source-channel junction is adequate to accurately determine the 2-D channel electrostatics, we show that this approach remains computationally tractable even at higher channel lengths. By following this approach, we obtain the 2-D profile of important device parameters such as electron density and channel potential, which, in turn, enables the determination of the thermionic current density and source-to-drain tunneling current density for a wide range of device parameters using Tsu-Esaki and WKB formalism respectively. Furthermore, the effect of phonon scattering, which is likely to manifest at longer channel lengths, is also incorporated in the drain current calculation, thus making this approach widely applicable.

Simulation of Source-to-drain (S/D) Tunnelling in Sub-10Nm DG MOSFETs with WKB Method

Simulation Of Source-To-Drain (S/D) Tunneling In Sub-10nm Dg Mosfets With Wkb Method

Simulation of Ballistic Transport Including S/D Tunneling for DG MOSFET

Simulation Study of Device Physics Issues in III&#x2013;V MOSFETs at 10 Nm Node

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Computation of Direct Tunneling gate leakage currents in nano-MOSFETs using ensemble Full Band Monte Carlo with quantum correction

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

Modeling On Direct Tunneling Current In Ultra-Thin Oxide Nmosfet Considering Quantum Mechanics

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.

Modeling of Tunneling Current Through Hf-based Dielectric Films for Nanoscale MOSFET

Direct Tunneling Current Model for MOS Devices with Ultra-Thin Gate Oxide Including Quantization Effect and Polysilicon Depletion Effect

Engineering of S/D Lateral Diffusion for DG-FETs Based on Full Quantum Analysis

Impact of Gate Dielectric Geometry on the Nanowire MOSFETs Performance and Scaling

Modeling of Gate Tunneling Current for Nanoscale MOSFETs with High-k Gate Stacks

Short-Channel-Effect Modeling of Dg-Fets Using Voltage-Doping Transformation Featuring Fd/Pd Modes

Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor

Source/Drain Series Resistances of Nanoscale Ultra-Thin-Body Soi Mosfets with Undoped or Very-Low-Doped Channel Regions

A Full-region Model for Ultra-Scaled MoS<inf>2</inf> MOSFET Covering Direct Source-Drain Tunneling

Computationally Efficient Band Structure-Based Approach for Accurately Determining Electrostatics and Source-to-Drain Tunneling Current in UTB MOSFETs

Channel-potential Based Compact Model of Double-Gate Tunneling FETs Considering Channel-Length Scaling