Abstract:A coupled electrical-thermal cosimulation with consideration of the temperature dependence of the metal-oxide-semiconductor (MOS) effect is performed for coaxial through silicon vias (C-TSVs) by using equivalent electrical and thermal circuit models. In the equivalent electrical circuit (EEC) model, the dependence of the MOS capacitance on bias voltage, operation frequency, oxide charge density, and temperature is studied, and further verified by measurement results from a previous publication. A 3-D equivalent thermal circuit (ETC) model with lump components, including thermal resistance and thermal capacitance analytically calculated from the geometry and material parameters of C-TSVs, is proposed for transient thermal simulation. The accuracy of the EEC and ETC models is verified by comparisons with full-wave simulations. Transient electrical-thermal co-simulation is performed for the C-TSVs with the EEC and ETC models. Results reveal that the temperature dependence of depletion width and corresponding MOS capacitance leads to considerable variations in the S-parameters of C-TSVs.

A Modified Model of High-T/sub C/ Superconducting Interconnect Propagation Characteristics for VLSI Packaging

Propagation Characteristics of High-T/sub C/ Superconducting Interconnect for VLSI Packaging Predicted by a Generalized Two-Fluid Model

In-Plane I-V Characteristics of Interlayer Josephson Vortices in Cuprate High-T-C Superconductors: Dynamical Simulations

Transmission Characteristics Of A Coaxial Through-Silicon Via (C-Tsv) Interconnect

Electrothermal modelling of novel through-silicon carbon nanotube bundle vias (TS-CNTBV)

Electrothermal modelling of through silicon via (TSV) interconnects

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Electrothermal investigation on through silicon multi-walled carbon nanotube via interconnects

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

High-Frequency Analysis of Cu-Carbon Nanotube Composite Through-Silicon Vias

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Modeling of Carbon Nanotube Interconnects and Comparative Analysis with Cu Interconnects

Electrical Modeling of Three-Dimensional Carbon-Based Heterogeneous Interconnects

Modeling and Characterization of Carbon-Based Heterogeneous Interconnects for 3-D Ics

Electromagnetic Compatibility-Oriented Study on Through Silicon Single-Walled Carbon Nanotube Bundle Via (TS-SWCNTBV) Arrays

Modeling of a Pair of Annular Through Silicon Vias (TSV)

Modeling of carbon nanotube (CNT) interconnects

Capacitive coupling analysis of TSV array in 3D packaging

Lumped 3-D Equivalent Thermal Circuit Model for Transient Thermal Analysis of TSV Array

Electrical–Thermal Cosimulation of Coaxial TSVs with Temperature-Dependent MOS Effect Using Equivalent Circuit Models

Full RLGC Model Extraction of Through Silicon Via (TSV) with Charge Distribution Effects