Abstract:Amorphous oxide semiconductors, especially indium gallium zinc oxide (IGZO), have been widely studied and obtained significant progress in flexible thin-film transistors (TFTs) due to the high carrier mobility and low deposition temperature. However, a further annealing step is generally required to activate electrical properties and improve the device performance, which limited their applications in flexible electronics. In this study, we achieved flexible TFTs and arrays using co-sputtered IGZO and indium tin oxide (ITO) as channels deposited at room temperature without post-annealing. It was found that better transistor switching properties could be effectively achieved by regulating the sputtering power of ITO in the co-sputtered deposition. The device performance is comparable to that of the conventional oxide TFTs with high annealing temperatures (≥300 °C), exhibiting a high saturation mobility (μsat) of 15.3 cm 2 V -1 s -1 , a small subthreshold swing (SS) of 0.21 V dec -1 , and a very high on-off ratio (Ion/off) of 10 11 . In addition, a 12 × 12 flexible TFT array was achieved with uniform performance owing to the low-temperature processing advantage of this technique. The flexible TFTs exhibited robust mechanical flexibility with a minimum bending radius of 5 mm and bending cycles up to 1000. Furthermore, an inverter based on co-sputtered IGZO and ITO was demonstrated with the maximum gain of 22. All these achievements based on the proposed TFTs without post-annealing process are expected to promote the applications in advanced flexible displays and large-area integrated circuits.

a-IGZO thin film transistors with channel layer deposited at room temperature and 250°C

Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Igzo Thin Film Transistors with Al2o3 Gate Insulators Fabricated at Different Temperatures

Low-Temperature Fabrication of Solution-Processed InGaZnO Thin-Film Transistors

Low-Temperature Fabrication of Fully Transparent Igzo Thin Film Transistors on Glass Substrate

High-Performance Dual-Layer Channel Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated In Different Oxygen Contents At Low Temperature

Facile Room Temperature Routes to Improve Performance of IGZO Thin-Film Transistors by an Ultrathin Al2O3 Passivation Layer

Transparent Amorphous Indium-Gallium-Zinc-Oxygen Thin Film Transistors Using Solution Technology at Low Temperature

Optical and electrical properties of room temperature prepared α-IGZO thin films using an In2Ga2ZnO7 ceramic target

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.

Effect Of Active Layer Deposition Temperature On The Performance Of Sputtered Amorphous In-Ga-Zn-O Thin Film Transistors

All-Sputtered, Flexible, Bottom-Gate Igzo/Al2o3 Bi-Layer Thin Film Transistors on Pen Fabricated by A Fully Room Temperature Process

High-Performance A-Ingazno Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric

Improvement of Electrical Characteristics and Stability of IGZO TFT Through Surface Single Crystallization of IGZO Film at Room Temperature

Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors

Room-temperature fabrication of flexible gallium-doped zinc oxide thin-film transistors on plastic substrates

Effect of Etching Stop Layer on Characteristics of Amorphous Igzo Thin Film Transistor Fabricated at Low Temperature

Room-temperature fabrication of flexible oxide TFTs by co-sputtering of IGZO and ITO

Fabrication of High-Performance A-Igzo Thin-Film Transistor with Post-Annealing Treatment

High‐mobility Flexible Thin‐film Transistors with a Low‐temperature Zirconium‐doped Indium Oxide Channel Layer

Significant Performance and Stability Improvements of Low-Temperature IGZO TFTs by the Formation of In-F Nanoparticles on an SiO2 Buffer Layer