Abstract:A power clamp circuit, which has good immunity to false trigger under fast power-on conditions with a 20 ns rising edge, is proposed in this paper. The proposed circuit has a separate detection component and an on-time control component which enable it to distinguish between electrostatic discharge (ESD) events and fast power-on events. As opposed to other on-time control techniques, instead of large resistors or capacitors, which can cause a large occupation of the layout area, we use a capacitive voltage-biased p-channel MOSFET in the on-time control part of the proposed circuit. The capacitive voltage-biased p-channel MOSFET is in the saturation region after the ESD event is detected, which can serve as a large equivalent resistance (~106 Ω) in the structure. The proposed power clamp circuit offers several advantages compared to the traditional circuit, such as having at least 70% area savings in the trigger circuit area (30% area savings in the whole circuit area), supporting a power supply ramp time as fast as 20 ns, dissipating the ESD energy more cleanly with little residual charge, and recovering faster from false triggers. The rail clamp circuit also offers robust performance in an industry-standard PVT (process, voltage, and temperature) space and has been verified by the simulation results. Showing good performance of human body model (HBM) endurance and high immunity to false trigger, the proposed power clamp circuit has great potential for application in ESD protection.

Area saved and clamp efficient multi-RC-triggered power clamp circuit for on-chip ESD protection

Design and Verification of a Novel Multi-Rc-triggered Power Clamp Circuit for On-Chip ESD Protection

Area-Efficient Power-Rail ESD Clamp Circuit with False-Trigger Immunity in 28nm CMOS Process

A novel multi-RC-triggered power clamp circuit for on-chip ESD protection

A False Trigger-Strengthened and Area-Saving Power-Rail Clamp Circuit with High ESD Performance

Area-efficient Transient Power-Rail Electrostatic Discharge Clamp Circuit with Mis-Triggering Immunity in a 65-Nm CMOS Process

Area-saved and Low-Leakage Design of Power-Rail Clamp Circuit

Feedback Enhanced Area-Efficient ESD Power Clamp Circuit

Minimizing Multiple Triggering Effect in Diode-Triggered Silicon-Controlled Rectifiers for ESD Protection Applications

Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

Improved Low-Voltage-Triggered Scr Structure for Rf-Esd Protection

New Power Clamp Circuit for Concurrent ESD and Surge Protections

A power clamp circuit using current mirror for on-chip ESD protection

ESD Pulse Width Effect on RC-triggered NMOS with Power on or Off

Design of Power-Rail ESD Clamp Circuit with Separate Detection Component and Delay Component Against Mis-Triggering

Investigation of Boundary-Mos-triggered SCR Structures for On-Chip ESD Protection

A novel power-clamp assisted complementary MOSFET for robust ESD protection.

Design Analysis of a Novel Low Triggering Voltage Dual Direction SCR ESD Device in 0. 18μm Mixed Mode RFCMOS Technology

Power-rail ESD Clamp Circuit with Hybrid-Detection Enhanced Triggering in a 65-Nm, 1.2-V CMOS Process.

An Investigation on Capacitance-Trigger ESD Protection Devices for High Voltage Integrated Circuits

A New Static Power Clamp Co-Designed with Input ESD Protection Circuit