Variation Law of Temperature Field in Synthesis of SiC by Carbothermal Reduction Method

Chen Ji
Abstract:Through the numerical simulation and experiments of temperature field in synthesis silicon carbide by carbothermal reduction method,the variation law of temperature field is revealed. The research shows that heat transfers outward radially centered the heat source in the SiC synthesis process,the resultant temperature(1600 ℃) isothermal face moves outward gradually,so the reaction area for the SiC synthesis increases. In the middle and later of synthesis reaction,a large number of SiC are synthesized. With synthesis continuing,SiC synthesis temperature region area increases slowly. Too long synthesis time can not only lead to decomposition of SiC that has been synthesized,but also be easy to form the spray furnace accident in practical production. Adequate proportion SiC decomposition is beneficial to produce high dense SiC.
Engineering,Materials Science
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