Abstract:A gas inlet channel is established to model the inflow of the inert gas (95% Ar) and dopant gas (5% N2), and a gas outlet channel to model the outflow of the gas species. The joint that allows exchanges of the gas species is modeled as a thin porous graphite sheet to simulate the mass transfer between the inside and outside of the growth chamber. The fluid flow velocity field inside and outside the crucible is calculated inside and outside the crucible under several experimental conditions. Although the exchange of the atmosphere control gas occurs only at the joint, the N2 can still rapidly diffuse to the crystal surface. Single‐crystal silicon carbide (SiC) is an important semiconductor material for the fabrication of power and radio frequency (RF) devices. The major technique for growing single‐crystal SiC is the so‐called physical vapor transport (PVT) method, in which not only the thermal field but also the fluid‐flow field and the distribution of gas species can be hardly measured directly. In this study, a multi‐component flow model is proposed that includes the inside and outside of a growth chamber and a joint between the seed crystal holder and crucible which allows exchanges of the gas species. The joint is simulated as a thin porous graphite sheet. The Hertz‐Knudsen equation is used to describe the sublimation and deposition. The convection and diffusion are described by the Navier–Stokes equations and mixture‐averaged diffusion model, in which the Stefan flow is taken into account. The numerical simulations are conducted by the finite element method (FEM) with a multi‐physics coupled model, which is able to predict the fluid flow field, species distribution field, crystal growth rate, and evolution of the molar concentration of dopant gas. Using this model, the effects of several experimental conditions on the transport of gas species and the growth rate of single‐crystal SiC are analyzed.

Numerical Simulation of Temperature Field and Pressure Field in Synthesis of SiC by Carbothermal Reduction Method

Variation Law of Temperature Field and Pressure Field in Synthesis of SiC by Carbothermal Reduction Method

Variation Law of Temperature Field in Synthesis of SiC by Carbothermal Reduction Method

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Studies of synthesizing the SiC nanometer powders by chemical vapor reaction

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Study on the Combustion Synthesis of Si3N4-SiC-TiN Ceramics

Numerical Simulation of the Transport of Gas Species in the PVT Growth of Single‐Crystal SiC

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Simulation of temperature profile and design of heat transfer structure for reactor of film growth on Si-wafer

Global Simulation of Coupled Oxygen and Carbon Transport in an Industrial Directional Solidification Furnace for Crystalline Silicon Ingots: Effect of Crucible Cover Coating

Numerical Simulation of Radiative Heat Transfer in 24 Pairs of Rod Polysilicon Reduction Furnace

Numerical investigation of carbon and silicon carbide contamination during the melting process of the Czochralski silicon crystal growth

Numerical Simulation of a New SiC Growth System by the Dual-Directional Sublimation Method

Optimization of the design of a crucible for a SiC sublimation growth system using a global model

Carbothermal Reduction Behavior of Micro-silica