Abstract:The electronic band structure of complex nanostructured semiconductors has a considerable effect on the final electronic and optical properties of the material and, ultimately, on the functionality of the devices incorporating them. Valence electron energy-loss spectroscopy (VEELS) in the transmission electron microscope (TEM) provides the possibility of measuring this property of semiconductors with high spatial resolution. However, it still represents a challenge for narrow-bandgap semiconductors, since an electron beam with low energy spread is required. Here we demonstrate that by means of monochromated VEELS we can study the electronic band structure of narrow-gap materials GaSb and InAs in the form of heterostructured nanowires, with bandgap values down to 0.5 eV, especially important for newly developed structures with unknown bandgaps. Using complex heterostructured InAs-GaSb nanowires, we determine a bandgap value of 0.54 eV for wurtzite InAs. Moreover, we directly compare the bandgaps of wurtzite and zinc-blende polytypes of GaSb in a single nanostructure, measured here as 0.84 and 0.75 eV, respectively. This allows us to solve an existing controversy in the band alignment between these structures arising from theoretical predictions. The findings demonstrate the potential of monochromated VEELS to provide a better understanding of the band alignment at the heterointerfaces of narrow-bandgap complex nanostructured materials with high spatial resolution. This is especially important for semiconductor device applications where even the slightest variations of the electronic band structure at the nanoscale can play a crucial role in their functionality.

Valence band splitting in wurtzite InGaAs nanoneedles studied by photoluminescence excitation spectroscopy.

Probing Valence Band Structure In Wurtzite Inp Nanowires Using Excitation Spectroscopy

Probing the Valence Band Structure of Wurtzite InP Nanowires by Photoluminescence Excitation Spectroscopy

Splitting of Valance Subbands in the Wurtzite C-Plane Ingan/Gan Quantum Well Structure

Illuminating the second conduction band and spin-orbit energy in single wurtzite InP nanowires.

Electronic band structure of narrow-bandgap p-n nanojunctions in heterostructured nanowires measured by electron energy loss spectroscopy

Bandgap Energy of Wurtzite Inas Nanowires

Indium distribution and light emission in wurtzite InGaN alloys: Several-atom In-N clusters

Observation Of Nonequilibrium Longitudinal Optical Phonons In Inn And Its Implications

Light Emission from Several-Atom In–N Clusters in Wurtzite Ga-rich InGaN Alloys and InGaN/GaN Strained Quantum Wells

Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures

Band Edge Modulation and Light Emission in Ingan Nanowires Due to the Surface State and Microscopic Indium Distribution

Interband Luminescence and Absorption of GaNAs/GaAs Single-Quantum-well Structures

Valence Band Density of States of Zinc-Blende and Wurtzite InN from X-Ray Photoemission Spectroscopy and First-Principles Calculations

Ab initio calculations of indium arsenide in the wurtzite phase: structural, electronic and optical properties

Luminescence mechanism of InGaAs self-fit well-cluster composite structure with super-wide spectra

Light Emission Induced by the Indium Distribution in InGaN Nanowires

Quantum Confinement Of Excitons In Wurtzite Inp Nanowires

Revealing the Band-Edge Exciton Fine Structure of Single InP Nanocrystals

Unusual Properties of the Fundamental Band Gap of InN

Electron Localization and Emission Mechanism in Wurtzite (al, In, Ga)N Alloys