Abstract:We report on a theoretical study of the electronic structures of the [1 1 1]-oriented, free-standing, zincblende InAs and InP nanowires with hexagonal cross sections by means of an atomistic sp3s∗ ?>, spin–orbit interaction included, nearest-neighbor, tight-binding method. The band structures and the band state wave functions of these nanowires are calculated and the symmetry properties of the bands and band states are analyzed based on the C3v double point group. It is shown that all bands of these nanowires are doubly degenerate at the Γ ?>-point and some of these bands will split into non-degenerate bands when the wave vector k moves away from the Γ ?>-point as a manifestation of spin-splitting due to spin–orbit interaction. It is also shown that the lower conduction bands of these nanowires all show simple parabolic dispersion relations, while the top valence bands show complex dispersion relations and band crossings. The band state wave functions are presented by the spatial probability distributions and it is found that all the band states show 2π/3 ?>-rotation symmetric probability distributions. The effects of quantum confinement on the band structures of the [1 1 1]-oriented InAs and InP nanowires are also examined and an empirical formula for the description of quantization energies of the lowest conduction band and the highest valence band is presented. The formula can simply be used to estimate the enhancement of the band gaps of the nanowires at different sizes as a result of quantum confinement.

Illuminating the second conduction band and spin-orbit energy in single wurtzite InP nanowires.

Probing Valence Band Structure In Wurtzite Inp Nanowires Using Excitation Spectroscopy

Probing the Valence Band Structure of Wurtzite InP Nanowires by Photoluminescence Excitation Spectroscopy

Quantum Confinement Of Excitons In Wurtzite Inp Nanowires

Polarization and Temperature Dependence of Photoluminescence from Zincblende and Wurtzite InP Nanowires

Precise Characterization of Self-Catalyzed III–V Nanowire Heterostructures Via Optical Second Harmonic Generation

Population Dynamics and Dephasing of Excitons and Electron-Hole Pairs in Polytype Wurtzite/zinc-Blende InP Nanowires

Valence band splitting in wurtzite InGaAs nanoneedles studied by photoluminescence excitation spectroscopy.

Exciton Emission from Hybrid Organic and Plasmonic Polytype InP Nanowire Heterostructures

Carrier Dynamics and Quantum Confinement in Type II ZB-WZ InP Nanowire Homostructures

Wide InP nanowires with wurtzite/zincblende superlattice segments are type-II whereas narrower nanowires become type-I: an atomistic pseudopotential calculation.

Unit cell parameters of wurtzite InP nanowires determined by x-ray diffraction

Bandgap Energy of Wurtzite Inas Nanowires

First-Principles Study of the Electronic Properties of Wurtzite, Zinc-Blende, and Twinned Inp Nanowires

Interband polarized absorption in InP polytypic superlattices

Unexpected Benefits of Stacking Faults on the Electronic Structure and Optical Emission in Wurtzite GaAs/GaInP Core/shell Nanowires

Optical properties of single InP and GaAs nanowire heterostructures

Ab initio calculations of indium arsenide in the wurtzite phase: structural, electronic and optical properties

Electronic Structures of [1 1 1]-Oriented Free-Standing InAs and InP Nanowires

Anisotropies of the G-Factor Tensor and Diamagnetic Coefficient in Crystal-Phase Quantum Dots in InP Nanowires

Fabrication and Optical Properties of Type‐ii InP/InAs Nanowire/quantum‐dot Heterostructures