Preparation of Wafer Level Glass-Embedded High-Aspect-Ratio Passives Using A Glass Reflow Process

Mengying Ma,Jintang Shang,Bin Luo
DOI: https://doi.org/10.1109/memsys.2015.7050981
2015-01-01
Abstract:This paper presents an innovative, uncomplicated and inexpensive method based on a glass reflow process to fabricate glass-embedded passives for RF MEMS packaging. Experimental results show that various glass-embedded passives, including annular cylindrical and coaxial cylindrical conductive through-holes, plate and coaxial torus trench capacitors, square spiral, circular spiral and meander trench inductors, and filters, can be manufactured void-free with vertical and smooth sidewall and large signal pathways. This glass-embedded design implements passives with large thickness and provides much surface space for 3D MEMS integration. The HFSS simulation results show that a minor thickness increase contributes to a large increase in Q and a relatively small decrease in L. The best Q (38.9-83.9) and L (19.9-15 nH) were achieved by using square spiral inductors.
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