Abstract:Emission properties of self-assembled green-emitting InGaN quantum dots (QDs) grown on sapphire substrates by using metal organic chemical vapor deposition are studied by temperature-dependent photoluminescence (PL) measurements. As temperature increases (15–300 K), the PL peak energy shows an anomalous V-shaped (redshift—blueshift) variation instead of an S-shaped (redshift—blueshift—redshift) variation, as observed typically in green-emitting InGaN/GaN multi-quantum wells (MQWs). The PL full width at half maximum (FWHM) also shows a V-shaped (decrease—increase) variation. The temperature dependence of the PL peak energy and FWHM of QDs are well explained by a model similar to MQWs, in which carriers transferring in localized states play an important role, while the confinement energy of localized states in the QDs is significantly larger than that in MQWs. By analyzing the integrated PL intensity, the larger confinement energy of localized states in the QDs is estimated to be 105.9 meV, which is well explained by taking into account the band-gap shrinkage and carrier thermalization with temperature. It is also found that the nonradiative combination centers in QD samples are much less than those in QW samples with the same In content.

Temperature Dependence of Electron Emission from InAs∕GaAs Quantum Dots

Electric-field dependence of electron emission from InAs/GaAs quantum dots

Temperature and Excitation Power Dependence of the Optical Properties of InAs Self-Assembled Quantum Dots Grown Between Two Al0.5Ga0.5As Confining Layers

Temperature behavior of excitation emission in self-organized InAs quantum dots

Exciton localization and temperature stability in self‐organized InAs quantum dots

Anomalous Temperature Dependence of Photoluminescence from InAs Quantum Dots

Temperature and Power-Density-dependent Inter-Shell Energy States in InAs/GaAs Quantum Dots

Spontaneous Emission Mechanisms of GaInAsN∕GaAs Quantum Dot Systems

Carrier Emission from the Electronic States of Self-Assembled Indium Arsenide Quantum Dots

Temperature-Dependent Carrier Tunneling for Self-Assembled Inas/Gaas Quantum Dots with A Gaasn Quantum Well Injector

Temperature dependent empirical pseudopotential theory for self-assembled quantum dots.

Emission Rates for Electron Tunneling from InAs Quantum Dots to GaAs Substrate

Temperature-Dependent Carrier Dynamics In Self-Assembled Ingaas Quantum Dots

Morphological and Temperature-Dependent Optical Properties of InAs Quantum Dots on GaAs Nanowires with Different InAs Coverage

Optical and material characteristics of InAs/GaAs quantum dots

Relation between photocurrent and DLTS signals observed for quantum dot systems

Temperature Dependence of Emission Properties of Self-Assembled InGaN Quantum Dots

Temperature And Excitation Dependence Of Photoluminescence From In/sub0.4/Ga/sub0.6/As Quantum Dots

Temperature dependence of inter-dot electron-spin transfer among laterally coupled excited states in high-density InGaAs quantum dots

Carrier Tunneling Effects on the Temperature Dependent Photoluminescence of Inas/Gaas Quantum Dot: Simulation and Experiment

Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence