Abstract:I this thesis, optical studies of InAs quantum dots (QDs) in GaAs and InP are presented. The electronic structure of these zero dimensional structures, grown in the Stranski-Krastanow growth mode, was studied by photoluminescence spectroscopy (PL), junction space-charge techniques (JSCT) and photoconductivity (PC) measurements. For the InAs/GaAs system we present single-dot photoluminescence spectra for different excitation power densities and temperatures. These spectra show level splitting due to few-particle effects. We also present calculations including both direct and exchange interaction for systems up to three excitons in the dot. We were able to assign different emission lines to transitions between different multiple exciton states. A rate equation model was developed which allows simulations of the peak intensities with excitation power density to be made and compared with experimental results. The InAs/InP system was investigated using PL spectroscopy, JSCT, and PC measurements. In contrast to other systems the holes were found to be more strongly confined than the electrons. We have also performed photoluminescence measurements revealing excited states in good agreement with theory. For both systems we studied the possibility to manipulate the positioning and size of the QDs. The growth results were investigated using atomic force microscopy (AFM) and PL measurements (Less)

Relation between photocurrent and DLTS signals observed for quantum dot systems

Exciton localization and temperature stability in self‐organized InAs quantum dots

Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence

Temperature dependent carrier dynamics in telecommunication band InAs quantum dots and dashes grown on InP substrates

Temperature behavior of excitation emission in self-organized InAs quantum dots

Carrier Tunneling Effects on the Temperature Dependent Photoluminescence of Inas/Gaas Quantum Dot: Simulation and Experiment

Temperature dependence of inter-dot electron-spin transfer among laterally coupled excited states in high-density InGaAs quantum dots

Effects of Photon and Thermal Coupling Mechanisms on the Characteristics of Self-Assembled Inas/Gaas Quantum Dot Lasers

Anisotropic Photoconductivity of InGaAs Quantum Dot Chains Measured by Terahertz Pulse Spectroscopy

Correlated Electron Transport Through Parallel Double-Quantum-dot

Temperature-Dependent Carrier Dynamics In Self-Assembled Ingaas Quantum Dots

A Comparison of Photoluminescence Properties of InGaAs/GaAs Quantum Dots with a Single Quantum Well

PHOTOLUMINESCENCE STUDY OF MULTILAYER in In_(0.55)Al_(0.45)As/A_(0.5)Ga_(0.5)As QUANTUM DOT AT VARIOUS TEMPERATURE

Optical Studies of InAs Quantum Dots in III-V Semiconductors

Bound-to-bound and bound-to-continuum optical transitions in combined quantum dot - superlattice systems

Strongly temperature-dependent recombination kinetics of a negatively charged exciton in asymmetric quantum dots at 1.55 μm

On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP(001)

Exciton dynamics in self-organized InAs/GaAs quantum dots

Carrier thermal escape in families of InAs/InP self-assembled quantum dots

Correlation Measurement of Quantum Cascade Photons in Single Inas Quantum Dot

Temperature-Dependent Carrier Tunneling for Self-Assembled Inas/Gaas Quantum Dots with A Gaasn Quantum Well Injector