Abstract:An innovative custom-designed inductively coupled plasma-assisted RF magnetron sputtering deposition system has been developed to synthesize B-doped microcrystalline silicon thin films using a pure boron sputtering target in a reactive silane and argon gas mixture. Films were deposited using different boron target powers ranging from 0 to 350W at a substrate temperature of 250°C. The effect of the boron target power on the structural and electrical properties of the synthesized films was extensively investigated using X-ray diffraction, Raman spectroscopy, scanning electron microscopy, and Hall-effect system. It is shown that, with an initial increase of the boron target power from 0 to 300W, the structural and electrical properties of the B-doped microcrystalline films are improved. However, when the target power is increased too much (e.g. to 350W), these properties become slightly worse. The variation of the structural and electrical properties of the synthesized B-doped microcrystalline thin films is related to the incorporation of boron atoms during the crystallization and doping of silicon in the inductively coupled plasma-based process. This work is particularly relevant to the microcrystalline silicon-based p–i–n junction solar cells.

Influence of Boron Doping on Microcrystalline Silicon Growth

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

Influence of boron on the properties of intrinsic microcrystalline silicon thin films

Investigation of Microstructure and Photoelectric Properties of Boron- Doped Amorphous Silicon Films

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

Influence of Doping and Microstructure on Electrical Properties of Doped Silicon Thin Films

Preferred growth of nanocrystalline silicon in boron-doped nc-Si:H Films

Influence of the Deposition Parameters on the Microstructure and Mechanical Properties of B-doped nc-Si: H Films

Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

Inductively coupled plasma-assisted RF magnetron sputtering deposition of boron-doped microcrystalline Si films

Growth and Characterization of Boron-Doped na-Si:H Films Used as Window Layer Material of Solar Cells

Doping silicon nanocrystals with boron and phosphorus

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Fabrication of High-Quality Boron-Doped Microcrystalline Silicon Thin Films on Several Types of Substrates

Observation of Boron Doping Induced Surface Roughening in Silicon Molecular Beam Epitaxy

Doping Efficiency, Dopant Location, and Oxidation of Si Nanocrystals

Growth and Characterization of Boron Delta-Function Shaped Doping Layer in Silicon by Molecular Beam Epitaxy

Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals