Abstract:Effects of boron and phosphorus doping on the structural, electrical, and optical properties of silicon nanocrystals in superlattice thin films were investigated. Silicon nanocrystals were fabricated via magnetron sputtering of stoichiometric silicon rich oxide and silicon dioxide bilayers followed by high temperature annealing at 1100 degrees Celsius. The characterization techniques used include: high-resolution transmission electron microscopy with energy filtering, grazing incidence x-ray diffraction, Raman, photoluminescence, and photothermal deflection spectroscopy, as well as electrical measurements. Results showed that phosphorus doping causes the loss of the bilayer structure and an increase in the average size of the silicon nanocrystals due to softening of the silicon dioxide matrix during post-sputter annealing. The result was a decrease in quantum confinement and a redshift in photoluminescence spectrum with an absorption profile similar to crystalline silicon. The undoped (intrinsic) sample maintained its bilayer structure and displayed stronger quantum confinement with higher photoluminescence peak energy and higher absorption coefficient. In-between, the boron doped sample was more similar structurally to the intrinsic sample, although merging between bilayers resulted in an extensive silicon nanocrystalline network. Optically, it displayed different effects due to photoluminescence quenching and free carrier absorption. Finally, both doped samples exhibited a decrease in electrical resistivity.

Inductively coupled plasma-assisted RF magnetron sputtering deposition of boron-doped microcrystalline Si films

Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Growth and Characterization of Boron-Doped na-Si:H Films Used as Window Layer Material of Solar Cells

Influence of boron on the properties of intrinsic microcrystalline silicon thin films

Fabrication of High-Quality Boron-Doped Microcrystalline Silicon Thin Films on Several Types of Substrates

Doping silicon nanocrystals with boron and phosphorus

A comprehensive calibration of integrated magnetron sputtering and plasma enhanced chemical vapor deposition for rare-earth doped thin films

Investigation of Microstructure and Photoelectric Properties of Boron- Doped Amorphous Silicon Films

Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

Highly Doped P-Type Microcrystalline Silicon Thin Films Fabricated by A Low-Frequency Inductively Coupled Plasma at A Low Temperature

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

Optical and electrical properties of synthesized reactive rf sputter deposited boron-rich and boron-doped diamond-like carbon thin films

Effects Of Electrolytic Parameters On The Deposition Of Boron At The Cathode During Molten Salt Electrolysis Of Silicon

Ligand-Free, Colloidal, and Plasmonic Silicon Nanocrystals Heavily Doped with Boron

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

Properties of silicon nanocrystals with boron and phosphorus doping fabricated via silicon rich oxide and silicon dioxide bilayers

Doped Microcrystalline Silicon Layers for Solar Cells by 13.56 Mhz Plasma-Enhanced Chemical Vapour Deposition