Abstract:Herein, a stable LiNbO3 (LN) sol, with different Zn2+ contents, is prepared using ethanol niobium, lithium acetate and zinc acetate as starting materials, absolute ethanol as a solvent, and acrylic acid and benzoyl acetone (BzAcH) as additives. The influence of Zn2+ content on LN crystal structure, light transmittance and J-V curve characteristics is studied in detail. XRD results reveal that Zn2+ doping, with a molar content of less than 5%, does not influence the crystal structure of LN. SEM indicates that the grain size of LN films gradually increases with the increase of doping content. The surface quality of LN films becomes worse when the doping content of Zn2+ reaches 5%. Moreover, light transmittance tests show that the maximum light transmittance is attained at the doping amount of 3%. J-V curves demonstrate that Pt/LN/LNO(LaNiO3) structure shows excellent resistance switching (RS) effect due to the formation of Schottky barrier at the Pt/LN interface, which initially becomes prominent with the increase of Zn2+ content, followed by a gradual decrease. On the other hand, In/LN/LNO structure exhibits poor RS effect due to the unobvious Schottky barrier at In/LNO interface. Furthermore, J-V curves at different temperatures demonstrate that the RS effect of Pt/LN/LNO structure tends to deteriorate, while the refractive index of LN film increases with the decrease of temperature. Herein, the abovementioned RS phenomenon is analyzed and explained in terms of the relationship between interfacial barrier and doping amount of Zn2+, migration of oxygen vacancies, and the relationship between insulation property of LN films and temperature. The research results are of experimental and theoretical significance for practical applications of LN films.

Rectifying the Current-Voltage Characteristics of A Linbo3 Film/Gan Heterojunction

Integration And Electrical Properties Of Epitaxial Linbo3 Ferroelectric Film On N-Type Gan Semiconductor

Junction Properties of Nitrogen-Doped Zno Thin Films

Rectifying I-V Characteristic of LiNbO3∕Nb-doped SrTiO3 Heterojunction

Fabrication and Electrical Properties of LiNbO3/ZnO/n-Si Heterojunction

Current-voltage characteristics of LiNbO3∕La0.69Ca0.31MnO3 heterojunction and its tunability

Effects of Lattice Strains on the Interfacial Potential in La0.67ca0.33mno3/Srtio3 : Nb Heterojunctions

Enhancing Electrical Properties of Linbo3/Algan/Gan Transistors by Using Zno Buffers

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Rectifying Behaviours of Heterojunctions Composed of Manganites with Different Resistive Properties

Band Alignment and Interface Recombination in NiO/β-Ga2O3 Type-II P-N Heterojunctions

Band Alignment and Interface Recombination in NiO/ β -Ga 2 O 3 Type-II p-n Heterojunctions

Electrical Characterization of Zno-Based Homojunctions

J-V characteristics of sol-gel-prepared Zn2+ doped LiNbO3

High rectifying performance of heterojunctions with interface between armchair C$_3$N nanoribbons with and without edge H-passivation

Accelerated Domain Switching Speed in Single-Crystal Linbo3 Thin Films

Fabrication and Characterization of P-Zno/n-zn0.8cd0.2o/n-zno Heterojunction

Suppression and Characterization of Interface States at Low-Pressure-chemical-vapor-deposited SiNx/III-nitride Heterostructures

Rectifying Properties of Solid C-60/N-Gan, C-70/N-Gan and C-70/P-Gan Heterojunctions

Rectifying Behavior and Photoinduced Characteristic in La‐doped BaSnO3/p‐Si Heterojunctions

A Study of the Interface and the Related Electronic Properties in N-Al0.35ga0.65n/Gan Heterostructure