Abstract:Interband photoluminescence (PL) and absorption spectra of n-InN samples with Hall concentrations from 3.6 X 10(17) to 6 X 10(18) cm(-3) were studied. Sample thicknesses were in the range from 12 to 0.47 mu m. A set of lasers for the PL excitation in the energy range from 2.41 down to 0.81 eV was used. The well-resolved structure consisting of three peaks was observed in the PL spectra of the high-quality samples in the energy interval from 0.50 to 0.67 eV at liquid-helium and nitrogen temperatures. We attributed one of two low-energy features of the spectra to the recombination of degenerate electrons with the holes trapped by deep acceptors with a binding energy of E-da=0.050-0.055 eV, and the other one was attributed to the LO-phonon replica of this band. The higher-energy PL peak is considered as a complex band formed by two mechanisms. The first one is related to the transitions of electrons to the states of shallow acceptors with a binding energy of E-sh=0.005-0.010 eV and/or to the states of the Urbach tail populated by photoholes. The second mechanism contributing to this band is the band-to-band recombination of free holes and electrons. The relative intensities of the two higher-energy PL peaks were found to be strongly dependent on temperature and excitation power. A model approach taking into account the Urbach tails of conduction and valence bands and the acceptor states was developed. The calculations of PL and the absorption spectra have shown that the band gap of InN in the limit of zero temperature and zero electron concentration is close to 0.665-0.670 eV. The model calculations allowed us to explain the structures of all the spectra observed, their dependence on the excitation power, and the temperature variations of PL and the absorption spectra. The effective masses of electrons at the Gamma point equal to 0,042 and 0.07 of free-electron mass were tested in calculations. The conductivity band was assumed to be nonparabolic.

Dependence Of Mg Acceptor Levels In Inn On Doping Density And Temperature

Search for Free Holes in Inn:Mg-Interplay Between Surface Layer and Mg-Acceptor Doped Interior

Transition of Dominant Lattice Sites of Mg in InN:Mg Revealed by Raman Scattering

Infrared Analysis of Hole Properties of Mg-doped P-Type InN Films

Hole Density And Anisotropic Mobility Of Mg-Doped Inn From The Analysis Of Lo Phonon-Hole Plasmon Properties

Growth and Properties of Mg-doped In-polar InN Films

Systematic Study on P-Type Doping Control of Inn with Different Mg Concentrations in Both in and N Polarities

Experimental and Theoretical Studies of Lattice Dynamics of Mg-Doped Inn

Hole Mobility in Mg-Doped P-Type Inn Films

Donor and Acceptor Concentrations in Degenerate InN

Acceptor States in the Photoluminescence Spectra of N-Inn

Mg acceptors activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys

Effect of Mg Doping on Enhancement of Terahertz Emission from Inn with Different Lattice Polarities

Temperature Dependence Of The Fundamental Band Gap Of Inn

Free-charge Carrier Parameters of N-Type, P-Type and Compensated InN:Mg Determined by Infrared Spectroscopic Ellipsometry

Reduction of the Mg Acceptor Activation Energy in GaN, AlN, Al0.83Ga0.17N and MgGaδ-doping (aln)5/(gan)1: the Strain Effect

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Influence of Indium Doping on Acceptor Activation Energy in P-Type Al_xGa_(1-x)N

Plasma Frequency and Dielectric Function Dependence on Doping and Temperature for P-Type Indium Phosphide Epitaxial Films

Correlation Between Switching to N-Type Conductivity and Structural Defects in Highly Mg-doped InN

Atomic Structure for Mg on Inn(0001) Surface