Abstract:Diluted magnetic semiconductors (DMS), in which some atoms of host semiconductors are randomly substituted by magnetic atoms, are regarded as key materials for spintronics because they have charge and spin degrees of freedom in a single substance. ZnO is a potential candidate for applications of spintronics devices since its possibility for room temperature ferromagnetism and its intrinsic excellent electrical properties. ZnO is also suitable for fabricating carrier controllable ferromagnetism because carrier-controlling techniques for ZnO have been well established. And among the methods used for deposition of thin films, PLD is effective and has the advantage that the ratios of the elemental components of the bulk and film are almost the same, even for chemically complex systems. In this paper, Zn 0.95 Co 0.05 O thin films were prepared by pulse laser deposition(PLD) on silicon(100) and quartz substrates. By optimizing the growth conditions, the Co-doped ZnO thin films obtained at temperature of 700 9C and oxygen pressure of 0.02 Pa showed magnetism even at room temperature. The X-ray diffraction patterns suggested that the obtained films showed c axis orientation preference, and Co related phases such as Co 2O 3 didn't appear, simply indicating that Co ions had been successfully doped into ZnO crystal lattices. SEM images showed that the films have dense surfaces with small roughness. The obtained sample was measured to have a hole concentration of ∼10 18 cm -3, a mobility of 18.7 cm 2 · V -1 · s -1, and a resistivity of about 0.04 Ω · cm, maintaining semiconductivity. And the magnetization of the Co-doped ZnO film can be measured at 12 K, even at room temperature.

Intrinsic room temperature ferromagnetism in Zn0.92Co 0.08O thin films prepared by pulsed laser deposition

Characterization of ZnO:Co particles prepared by hydrothermal method for room temperature magnetism

Properties of Zn1-xCoxO thin films grown on silicon substrates prepared by pulsed laser deposition

Role of Cobalt in Room-Temperature Ferromagnetic Co-Doped Zno Thin Films

Enhanced Room Temperature Ferromagnetism in Co-Doped Zno Mediated by Interstitial H

The Intrinsic Room-Temperature Ferromagnetism in ZnO:Co Thin Films Deposited by PLD

Intrinsic room temperature ferromagnetism in Co-implanted ZnO

Intrinsic and Spatially Nonuniform Ferromagnetism in Co-doped ZnO Films

Fabrication and magnetic properties of co-doped ZnO thin films by pulsed laser deposition

Room-temperature Ferromagnetism in Co-doped ZnO Diluted Magnetic Semiconductor

Room-Temperature Ferromagnetism in Co-Doped Zno Prepared by Microemulsion

Growth Temperature Dependent Evolutions of Microstructural, Optical and Magnetic Properties of Zn0.75Co0.25O Films

Coexistence of Superparamagnetism and Ferromagnetism in Co-Doped Zno Nanocrystalline Films

Room-temperature Ferromagnetism in Zn_(1-x)Co_xO DMSs Prepared by Rheological Phase Reaction Method

Fabrication and Properties of Li-doped ZnCoO Diluted Magnetic Semiconductor Thin Films

Evidence of Oxygen Vacancy Mediated Room-Temperature-Ferromagnetism in Co-Doped Zno Films Upon Hydrogen Treatment

The Magnetic Properties of Co-Doped Zno Diluted Magnetic Insulator Films Prepared by Direct Current Reactive Magnetron Co-Sputtering

Grain boundary defects-mediated room temperature ferromagnetism in Co-doped ZnO film

Room-Temperature Ferromagnetism in Co-Doped Zno Bulk Induced by Hydrogenation

Room-Temperature Ferromagnetism in Co-Doped Zno Fabricated by Coprecipitation Method

Room-Temperature Ferromagnetism in Cobalt and Aluminum Co-Doping Tin Dioxide Diluted Magnetic Semiconductors