High-temperature Crystallization Behaviors of Amorphous Si-Al-C-N with Low Aluminum Content

LI Song,ZHANG Yue
2011-01-01
Abstract:Amorphous Si-AI-C-N ceramics with varied aluminum contents,which were derived from polyaluminasilazanes at 1200℃,were heat-treated at 1400-1800℃.The structures of precursors and the crystallization behaviors,free-carbon and microstructure of Si-AI-C-N were characterized by Infrared spectrometry,X-ray diffraction,Raman spectra and transmission electron microscopy.The effects of aluminum contents,crystallization temperatures and times on crystallization properties of amorphous Si-AI-C-N were investigated.The results show that amorphous 5i-AI-C-N ceramics are amorphous at 1400℃,but include free-carbon.Nano-scaleβ-Si_3N_4 andα-Si_3N_4 nuclei are precipitated at 1500℃. Theα-Si_3N_4 nucleus transforms intoβ-Si_3N_4 after treated at 1600℃,at the same time,a minute quantity ofα-SiC and 2H-SiC/AIN solid solution nuclei precipitated.At 1700℃a large number of 2H-SiC/AIN solid solution crystals and a fewα/β-SiC crystals precipitated besidesβ-Si_3N_4,and theβ-Si_3N_4 phase in the Si-AI-C-N ceramic with lowest aluminum content disappears.At 1800℃onlyβ-SiC and 2H-SiC/AIN solid solution crystal are observed.But phase separation takes place at this temperature, leading to the formation of AIN-rich and SiC-rich solid solution region,respectively.With increasing aluminum content,crystallization ability of amorphous Si-AI-C-N ceramics and quantities of grain increase. Nano-scale crystals precipitate from the amorphous Si-AI-C-N at 1500℃,but even until 1800℃the precipitated crystals are still nano-scale crystals.The high-temperature crystallization process of amorphous Si-AI-C-N with high covalence is a process controlled by thermodynamics.
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