Abstract:Crystallization of amorphous materials by thermal annealing has been investigated for numerous applications in the fields of nanotechnology, such as thin-film transistors and thermoelectric devices. The phase transition and shape evolution of amorphous germanium (Ge) and Ag@Ge core-shell nanoparticles with average diameters of 10 and 12 nm, respectively, were investigated by high-energy electron beam irradiation and in situ heating within a transmission electron microscope. The transition of a single Ge amorphous nanoparticle to the crystalline diamond cubic structure at the atomic scale was clearly demonstrated. Depending on the heating temperature, a hollow Ge structure can be maintained or transformed into a solid Ge nanocrystal through a diffusive process during the amorphous to crystalline phase transition. Selected area diffraction patterns were obtained to confirm the crystallization process. In addition, the thermal stability of Ag@Ge core-shell nanoparticles with an average core of 7.4 and a 2.1 nm Ge shell was studied by applying the same beam conditions and temperatures. The results show that at a moderate temperature (e.g., 385 °C), the amorphous Ge shell can completely crystallize while maintaining the well-defined core-shell structure, while at a high temperature (e.g., 545 °C), the high thermal energy enables a freely diffusive process of both Ag and Ge atoms on the carbon support film and leads to transformation into a phase segregated Ag-Ge Janus nanoparticle with a clear interface between the Ag and Ge domains. This study provides a protocol as well as insight into the thermal stability and strain relief mechanism of complex nanostructures at the single nanoparticle level with atomic resolution.

Investigation on morphology and thermal stability of NiGe utilizing ammonium fluoride pretreatment for germanium-based technology

Improvement of Thermal Stability of Nickel Germanide Using Nitrogen Plasma Pretreatment for Germanium-Based Technology

A comparative study of C, N and Xe pre-amorphization implantation processes for improving the thermal stability of NiSi films

High-Performance Germanium pMOSFETs With NiGe Metal Source/Drain Fabricated by Microwave Annealing

Impact of ion implantation on nickel germanides formation with pure-Ge substrate and the electrical dependence of NiGe/Ge schottky diode on contact size

PREPARATION AND PROPERTIES OF BULK AMORPHOUS Fe-Ni-P-B-Ga ALLOYS

Influence of Post-Annealing Treatment on the Morphology of Au Films Deposited on Liquid Surfaces

Examination of physical origins limiting effective mobility of Ge MOSFETs and the improvement by atomic deuterium annealing

Atomic-scale in situ observation of electron beam and heat induced crystallization of Ge nanoparticles and transformation of Ag@Ge core-shell nanocrystals

Effects Of Fluorination Temperature On Surface Structure And Electrochemical Properties Of Ab(2) Electrode Alloys

Investigation of Ni Reaction with Sputtered Amorphous Sige Thin Film on Sio2 Substrate

Preparation of Hydrogenated Amorphous Germanium Nitrogen Alloys by Plasma Enhanced Chemical Vapor Deposition

Study on structural stability of hydrogenated amorphous germanium-nitrogen alloys

Thermal Stability and Interface Improvement of Thin Nisige by C+ Ion Implantation

Low-temperature preparation of polycrystalline germanium thin films by Al-induced crystallization

Investigation of Ni reaction with amorphous SiGeC thin film

Efficient stepwise-purification and mechanism of germanium-containing materials with ammonium

Raman and Ft-Ir Study on Structure and Its Stability of Hydrogenated Amorphous Germanium-Nitrogen Alloys

Morphology and Electrical Performance Improvement of NiGe/Ge Contact by P and Sb Co-implantation

Formation of high quality nano-crystallized Ge films on quartz substrates at moderate temperature

Elemental Diffusion Study of Ge/Al2O3 and Ge/AlN/Al2O3 Interfaces Upon Post Deposition Annealing