Abstract:In this paper, Ni/Au/Ge/Ni/Au laminated metals were deposited on the n-(Al0.27Ga0.73)(0.5)In0.5P by electron beam evaporation, the ohmic contact with low contact resistance was successfully prepared by optimized annealing process. The specific contact resistance reached 1.4 x 10(-4) Omega.cm(2) when annealed at 445 degrees C for 600 s. The result of the secondary ion mass spectrometer shows that the solid-state reaction takes place at the interface between the laminated metal Ni/Au/Ge/Ni/Au and n-AlGaInP, then the germanium atoms and indium atoms diffuse outwards due to thermal decomposition and leave vacancies in the lattice. In this paper, the reason for the formation of ohmic contact is attributed to the fact that the germanium vacancy and indium vacancy are occupied by gallium atoms as donors to increasing the N-type doping concentration. The optimized annealing process can improve the ohmic contact performance of n-(Al0.27Ga0.73)(0.5)In0.5P with low doping concentration, but the specific contact resistivity has no obvious relationship with the annealing process when the of doping concentration of n-(Al0.27Ga0.73)(0.5)In0.5P increased. The Schottky barrier is high at low doping concentration of n-(Al0.27Ga0.73)(0.5)In0.5P. So inter diffusion in the annealing process could significantly increase the doping concentration of n-(Al0.27Ga0.73)(0.5)In0.5P and reduce the Schottky barrier height. Nevertheless, the Schottky barrier of the sample with high doping concentration is low enough what is not sensitive with inter diffusion. It provides a new method for the preparation of N-electrode of AlGaInP thin film light-emitting-diodes chip, as so as avoid the problem of n(+)-GaAs absorption in the conventional N-electrode preparation method and the problem of electrode dropping. However, there are still some shortcomings in this paper. The disadvantage is that the high doping concentration of n-AlGaInP will affect the crystal quality, which will reduce the luminous efficiency of LED. Therefore, in order to prepare ohmic contact with excellent properties on n-AlGaInP with lower doping concentration, optimizing the electrode design and the surface treatment of semiconductor materials are the keys to follow-up research.

Improvement of Thermal Stability of Nickel Germanide Using Nitrogen Plasma Pretreatment for Germanium-Based Technology

Investigation on morphology and thermal stability of NiGe utilizing ammonium fluoride pretreatment for germanium-based technology

Effect Of Platinum Interlayer On The Thermal Stability Improvement Of Nickel Stanogermanide

Improvement of Nickel-Stanogermanide Contact Properties by Platinum Interlayer

Pulsed N2 Plasma Surface Treatment for AlGaN/GaN HEMTs Prior to PECVD SiNx Passivation to Reduce Plasma Damage

Impact of Nitrogen Plasma Passivation on the Interface of Germanium Mos Capacitor

Impact of ion implantation on nickel germanides formation with pure-Ge substrate and the electrical dependence of NiGe/Ge schottky diode on contact size

Thermal Stability and Interface Improvement of Thin Nisige by C+ Ion Implantation

Formation of Nickel Germanides from Ni Layers with Thickness below 10 Nm

Surface Passivation of the Ge Substrate by Novel Nitrogen Plasma Immersion Treatment

Suppression of Ald-Induced Degradation of Ge Mos Interface Properties by Low Power Plasma Nitridation of Geo2

Ultrathin Geoxny Interlayer Formed By In Situ Nh3 Plasma Pretreatment For Passivation Of Germanium Metal-Oxide-Semiconductor Devices

Thermal Stability Enhancement of NiGe Metal Source/Drain and Ge Pmosfets by Dopant Segregation

Morphology and Electrical Performance Improvement of NiGe/Ge Contact by P and Sb Co-implantation

Improving quality of AlN films on GaAs substrate via in-situ plasma pre-treatment in plasma enhanced atomic layer deposition

Influence of Nitrogen Pre-Irradiation at Different Temperatures on Surface Blistering and Deuterium Retention in Tungsten

NI Germanide Schottky contact with GE

Preparation of Hydrogenated Amorphous Germanium Nitrogen Alloys by Plasma Enhanced Chemical Vapor Deposition

Investigation of Passivation of Ge Substrate by N2O Plasma and N2 plasma Treatment

Impact of Post-deposition Plasma Treatment on Surface Passivation Quality of Silicon Nitride Films

Study on the effect of thermal annealing process on ohmic contact performance of AuGeNi/n-AlGaInP