Abstract:Ferroelectricity in sputtered undoped-HfO$_2$ is attractive for composition control for low power and non-volatile memory and logic applications. Unlike doped HfO$_2$, evolution of ferroelectricity with annealing and film thickness effect in sputter deposited undoped HfO$_2$ on Si is not yet reported. In present study, we have demonstrated the impact of post metallization annealing temperature and film thickness on ferroelectric properties in dopant-free sputtered HfO$_2$ on Si-substrate. A rich correlation of polarization with phase, lattice constant, and crystallite size and interface reaction is observed. First, anneal temperature shows o-phase saturation beyond 600 oC followed by interface reaction beyond 700 oC to show an optimal temperature window on 600-700 oC. Second, thickness study at the optimal temperature window shows an alluring o-phase crystallite scaling with thickness till a critical thickness of 20 nm indicating that the films are completely o-phase. However, the lattice constants (volume) are high in the 15-20 nm thickness range which correlates with the enhanced value of 2Pr. Beyond 20 nm, crystallite scaling with thickness saturates with the correlated appearance of m-phase and reduction in 2Pr. The optimal thickness-temperature window range of 15-20 nm films annealed at 600-700 oC show 2Pr of ~35.5 micro-C/cm$^2$ is comparable to state-of-the-art. The robust wakeup-free endurance of ~$10^$8 cycles showcased in the promising temperature-thickness window has been identified systematically for non-volatile memory applications.

Formation of Silicon Nanocrystals Embedded in High-Κ Dielectric HfO2 and Their Application for Charge Storage

Memory Effect of Metal-Oxide-Silicon Capacitors with Self-Assembly Double-Layer Au Nanocrystals Embedded in Atomic-Layer-Deposited HfO 2 Dielectric

Co/HfO2 Core-Shell Nanocrystal Memory

Charge Storage and Tunneling Mechanism of Ni Nanocrystals Embedded Hfox Film

Epitaxial Integration of Tetragonal Bifeo3 with Silicon for Nonvolatile Memory Applications

Charge Storage Characteristics of Au Nanocrystal Memory Improved by the Oxygen Vacancy-Reduced HfO2 Blocking Layer

Silicon-Carbide (SiC) Nanocrystal Technology and Characterization and Its Applications in Memory Structures

High Density And Program-Erasable Metal-Insulator-Silicon Capacitor With A Dielectric Structure Of Sio2/Hfo2-Al2o3 Nanolaminate/Al2o3

Memory Effect of Metal—Insulator—Silicon Capacitors with SiO<sub>2</sub>/HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Dielectrics

Inductive Crystallization Effect of Atomic-Layer-deposited Hf0.5Zr0.5O2 Films for Ferroelectric Application

Monolayer FePt Nanocrystal Self-Assembly Embedded into Atomic-Layer-deposited Al2O3 Films for Nonvolatile Memory Applications

Enlargement of Memory Window of Si Channel FeFET by Inserting Al2O3 Interlayer on Ferroelectric Hf0.5Zr0.5O2

Enhanced charge storage characteristics by ZrO2 nanocrystallites precipitated from amorphous (ZrO2)0.8(SiO 2)0.2 charge trapping layer

Self-Assembly Growth and Size Control of Silver Nanocrystals for Nonvolatile Memory Applications

Large Storage Window in A-Sinx/Nc-Si/A-Sinx Sandwiched Structure for Nanocrystalline Silicon Floating Gate Memory Application

Narrow Channel MOSFET Memory Based on Silicon Nanocrystals and Charge Storage Characteristics

Formation of High Density TiN Nanocrystals and Its Application in Non-Volatile Memories

Memory effect of metal - Insulator - Silicon capacitors with SiO 2/HfO2/Al2O3 dielectrics

Ultrathin HfON/SiO2 Dual Tunneling Layer for Improving the Electrical Properties of Metal–oxide–nitride–oxide–silicon Memory

Evolution of ferroelectricity with annealing temperature and thickness in sputter deposited undoped HfO$_2$ on silicon

Optimization of Silicon Nanocrystals Growth Process by Low Pressure Chemical Vapor Deposition for Non-Volatile Memory Application