Abstract:In this study, we used the one-pot solvothermal method to synthesize the TiO2nanospheres (NSs) and used them for non-volatile memory and neuromorphic computing applications. Several analytical tools were used to understand the structural, optical, morphological, and compositional characteristics of synthesized TiO2NSs. The tetragonal crystal structure of anatase TiO2was formed, according to the Rietveld refined x-ray diffraction results. The NS morphology was confirmed by field emission scanning electron microscopy and transmission electron microscopy images. X-ray photoelectron spectroscopy was probed to understand the elemental composition and electronic states of the TiO2NSs. We specifically looked at the impact of reaction time on the structural, optical, morphological, compositional, and resistive switching (RS) properties of TiO2NSs. The fabricated devices (Ag/TiO2NSs/FTO) exhibit bipolar RS behavior. The optimized RS device shows good endurance (5000 cycles) and memory retention (5000 s) properties. Moreover, fabricated devices showed double-valued charge-flux characteristics, whereas charge transport was caused by the Ohmic and space charge-limited current mechanisms. Additionally, the optimized device can mimic various synaptic characteristics including potentiation-depression, excitatory post-synaptic current, and paired-pulse facilitation.

Formation of High Density TiN Nanocrystals and Its Application in Non-Volatile Memories

Formation of NiSi2/SiN compound nanocrystal for nonvolatile memory application

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Solvothermal synthesis of TiO2nanospheres for non-volatile memory and synaptic learning applications

Charge-Trapping Characteristics of Ga2o3 Nanocrystals for Nonvolatile Memory Applications

Charge Storage and Tunneling Mechanism of Ni Nanocrystals Embedded Hfox Film

Role Of Germanium In The Reduced Temperature Dependence Of Ti-Based Nanocrystals Formation For Nonvolatile Memory Applications

Charge Storage Characteristics of Au Nanocrystal Memory Improved by the Oxygen Vacancy-Reduced HfO2 Blocking Layer

Formation of Cosi2/Cosixny Nanocrystals for Nonvolatile Memory Application

Performance and reliability feature of nanocrystal memory devices