Abstract:A metal-insulator-semiconductor (MIS) device that consists of germanium (Ge) nanocrystals embedded in a novel tri-layer insulator structure is proposed for memory applications [1]. The tri-layer structure comprises a thin (˜5nm) rapid thermal oxidation (RTO) silicon dioxide (SiO 2 ) layer, a Ge+SiO 2 middle layer (6 - 20 nm) deposited by RF co-sputtering technique and a RF-sputtered silicon dioxide capping layer. High-resolution transmission electron microscopy (HRTEM) results show that Ge nanocrystals of sizes ranging from 6–20 nm were found after rapid thermal annealing of the trilayer structure at 1000°C for 300s. The electrical properties of these devices have been characterized using capacitance versus voltage (C-V) measurements. A significant hysteresis was observed in the C-V curves of these devices, indicating charge trapping in the composite insulator. Comparison with devices having similar tri-layer insulator structure, but with a pure sputtered oxide middle layer (i.e. minus the Ge nanocrystals), clearly indicated that the observed charge trapping is due to the presence of the Ge nanocrystals in the middle layer. The C-V measurements of devices without the capping SiO 2 layer exhibited no significant hysteresis as compared to the embedded Ge nanocrystal tri-layer devices. The HRTEM micrographs showed that the presence of the capping oxide is critical in the formation of nanocrystals for this structure. By varying the thickness of the middle layer, it was found that the maximum nanocrystal size correlates well with the middle layer thickness. This indicates that the nanocrystals are well confined by the RTO oxide layer and the capping oxide layer. In addition, Ge nanocrystals formed using a thinner middle layer were found to be relatively uniform in size and distribution. This structure, therefore, offers a possibility of fabricating memory devices with controllable Ge nanocrystals size.

Role Of Germanium In The Reduced Temperature Dependence Of Ti-Based Nanocrystals Formation For Nonvolatile Memory Applications

Investigation of GeTe/Ge2Sb2Te5 Nanocomposite Multilayer Films for Phase-Change Memory Applications

Formation of High Density TiN Nanocrystals and Its Application in Non-Volatile Memories

Synthesis of Germanium Nanocrystals and Its Possible Application in Memory Devices

Crystallization Characteristic and Structure of Hafnium Addition in Germanium Antimony Thin Films for Phase Change Memory

Effects of Germanium and Nitrogen Incorporation on Crystallization of N-Doped Ge2+Xsb2te5 (X=0,1) Thin Films for Phase-Change Memory

Crystallization Characteristic And Scaling Behavior Of Germanium Antimony Thin Films For Phase Change Memory

The Formation of Ge Nanocrystals in a Metal–insulator–semiconductor Structure and Its Memory Effect

Superlattice-like Sb-Ge Thin Films for High Thermal Stability and Low Power Phase Change Memory

Thickness Dependence and Crystallization Properties of Amorphous GeTe Thin Films on Silicon Dioxide

Effect of Annealing on Charge Transfer in Ge Nanocrystal Based Nonvolatile Memory Structure

Titanium–tungsten Nanocrystals Embedded in a SiO2/Al2O3gate Dielectric Stack for Low-Voltage Operation in Non-Volatile Memory

Low Thermal Conductivity in Ge2Sb2Te5–SiOx for Phase Change Memory Devices

Understanding The Crystallization Behavior And Structure Of Titanium Addition In Germanium Antimony Phase Change Thin Films

Simultaneously High Thermal Stability and Low Power Based on Ti-Doped Ge2Sb2Te5 Thin Films

Ge/Sb2Te3 nanocomposite multilayer films for high data retention phase-change random access memory application

Manipulation of Germanium Nanocrystals in a Tri-Layer Insulator Structure of a Metal-Insulator-Semiconductor Memory Device

Observation of Memory Effect in Germanium Nanocrystals Embedded in an Amorphous Silicon Oxide Matrix of a Metal–insulator– Semiconductor Structure

Phase-Change Characteristics and Thermal Stability of GeTe/Sb<sub>2</sub>Te<sub>3</sub>Nanocomposite Multilayer Films

Investigation of Ni Doped Ge-Te Materials for High Temperature Phase Change Memory Applications

Size Control And Charge Storage Mechanism Of Germanium Nanocrystals In A Metal-Insulator-Semiconductor Structure