Abstract:Phase change memory devices are typically reset by melt-quenching a material to radically lower its electrical conductance. The high power and concomitantly high current density required to reset phase change materials is the major issue that limits the access times of 3D phase change memory architectures. Phase change superlattices were developed to lower the reset energy by confining the phase transition to the interface between two different phase change materials. However, the high thermal conductivity of the superlattices means that heat is poorly confined within the phase change material, and most of the thermal energy is wasted to the surrounding materials. Here, we identified Ti as a useful dopant for substantially lowering the thermal conductivity of Sb2Te3-GeTe superlattices whilst also stabilising the layered structure from unwanted disordering. We demonstrate via laser heating that lowering the thermal conductivity by doping the Sb2Te3 layers with Ti halves the switching energy compared to superlattices that only use interfacial phase change transitions and strain engineering. The thermally optimized superlattice has (0 0 l) crystallographic orientation yet a thermal conductivity of just 0.25 W/m.K in the "on" (set) state. Prototype phase change memory devices that incorporate this Ti-doped superlattice switch faster and and at a substantially lower voltage than the undoped superlattice. During switching the Ti-doped Sb2Te3 layers remain stable within the superlattice and only the Ge atoms are active and undergo interfacial phase transitions. In conclusion, we show the potential of thermally optimised Sb2Te3-GeTe superlattices for a new generation of energy-efficient electrical and optical phase change memory.

Simultaneously High Thermal Stability and Low Power Based on Ti-Doped Ge2Sb2Te5 Thin Films

Improvement of phase change behavior in titanium-doped Ge2Sb2Te5 films

Ga2te3 Phase Change Material For Low-Power Phase Change Memory Application

Low Thermal Conductivity Phase Change Memory Superlattices

Electrical Characteristics of Ga3Te2Sb12 with High Thermal Stability for Pram

One order of magnitude faster phase change at reduced power in Ti-Sb-Te

Characteristics of TeGa$_{2}$Sb$_{14}$ Thin Films for Phase-Change Memory

The characteristics of GeTe-Sb thin films with different Sb concentration for phase change memory

Thermal Properties And Structure Of Tega2sb7 Thin Films For Phase-Change Memory

Thermal stability and high speed for optoelectronic hybrid phase-change memory based on Cr doped Ge2Sb2Te5 thin film

Understanding the microstructure evolution of carbon-doped Sb2Te3 phase change material for high thermal stability memory application

The Coupling Effect and Phase Transition Behavior of Multiple Interfaces in GeTe/Sb Superlattice-Like Films

Materials For Phase-Change Memory With Elevated Temperature Stability

The Phase Change Memory Features High-Temperature Characteristic Based on Ge-Sb-Se-Te Alloys

Advantages of Ta-Doped Sb3Te1 Materials for Phase Change Memory Applications

Tixsb2te Thin Films for Phase Change Memory Applications

Uncovering the physical properties, structural characteristics, and electronic application of superlattice-like Ti/Sb phase-change thin films

Outstanding phase-change behaviors of GaGeSbTe material for phase-change memory application

Study of Si-Doped Sb2te3 Films for Phase Change Memory

Si Doping in Ge2Sb2Te5 Film to Reduce the Writing Current of Phase Change Memory

B21-P-09The Crystal Micro-Structure Evolution of In-Situ Annealed Phase Change Material TiSbTe Film