Impact of titanium modification on the performance improvement and phase change mechanism of ZnSb thin film
Bowen Fu,Weihua Wu,Pei Zhang,Han Gu,Xiaochen Zhou,Xiaoqin Zhu,Jiwei Zhai
DOI: https://doi.org/10.1016/j.surfin.2024.105044
IF: 6.2
2024-09-05
Surfaces and Interfaces
Abstract:Phase change memory has emerged as a promising option for neuro-inspired and data-intensive AI applications, attracting significant attention from the semiconductor field recently. The performance of the device relies on the phase change material, aiming for enhanced thermal stability along with low power consumption. Nanocomposite ZnSb thin films with titanium dopant were prepared and their crystallization properties and mechanisms were investigated. Compared to pure ZnSb material, the addition of titanium can significantly enhance the temperature of crystallization and the 10-year data retention ability, both of which surpassing 16 °C. The obvious enhancement in thermal stability may be ascribed to the ionic bond formation between titanium and antimony elements, as indicated by differential charge calculations. Also, phase change memory cells with a diameter of 190 nm were fabricated using standard CMOS technology. The Ti-doped ZnSb thin film demonstrates rapid crystallization and amorphization within 50 ns while consuming low power at approximately 1.5 × 10 −10 J. The decrease in power consumption may stem from the increase in band gap energy and a decrease in electrical conductivity, as confirmed by first-principles calculations. Both experimental and theoretical results prove that titanium doping can remarkably improve the physical properties of ZnSb thin film, facilitating the exploration and design of novel phase change materials with high thermal stability, low power consumption, as well as fast switching speed.
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films