Abstract:Metal–organic framework (MOF) is an emerging important class of functional materials in the fields of information storage, wearable electronics and optoelectronic devices. The interaction of electrons or holes with MOFs is important for the systematic exploration of MOFtronics and to investigate the related structure–performance correlation. Herein, MOF flat nanosheets of copper tetrakis(4‐carboxyphenyl)porphyrin with sub‐10 nanometer scale in thickness are employed as the charge‐trapping layer in organic field‐effect floating‐gate transistor memory device fabricated by an air–liquid interfacial assembly and subsequent stamping operation. As charge trapping sites, MOF nanosheets with ultrathin nanoporous arrays significantly improve in comparison with the memory device using its counterpart ligand of tetrakis(4‐carboxyphenyl)porphyrin as the trapping elements. As compared to the reported widely applied nanofloating gate materials of gold nanoparticles, graphene, or macromolecular nanomaterials, a short pulse (≈20 ms) on the device gets a considerable memory window of ≈37.5 V at a programming voltage of ‐80 V, with a retention time longer than 104 s and good ON/OFF ratio of >103. Furthermore, the hybrid structure composed of metal and organic components endows it with electron and hole trapping capability. This work could push forward the fundamental research of organic–inorganic–hybrid electronics in future microelectronic research. The interactions of electrons or holes with metal–organic frameworks (MOFs) are important for the systematic exploration of MOFtronics and investigation of the related structure–property correlation optimization. Herein, ultrathin copper tetrakis(4‐carboxyphenyl)porphyrin nanosheets exhibit good electron and hole trapping capability superior to its ligand tetrakis(4‐carboxyphenyl)porphyrin and ranks high in current nanofloating gate materials.

Ultrathin HfON/SiO2 Dual Tunneling Layer for Improving the Electrical Properties of Metal–oxide–nitride–oxide–silicon Memory

Multistacked Al2O3∕HfO2∕SiO2 Tunnel Layer for High-Density Nonvolatile Memory Application

Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications

Charge Trapping Memory Characteristics of P-Si/ultrathin Al[sub 2]o[sub 3]∕(hfo[sub 2])[sub 0.8](al[sub 2]o[sub 3])[sub 0.2]∕al[sub 2]o[sub 3]/metal Multilayer Structure

Influence of HfAlO Composition on Memory Effects of Metal-Oxide-semiconductor Capacitors with Al2O3/HfAlO/Al2O3 Layers and Pd Electrode

Outstanding Memory Characteristics with Atomic Layer Deposited Ta2O5/Al2O3/TiO2/Al2O3/Ta2O5 Nanocomposite Structures As the Charge Trapping Layer

Enhancement of the Charge Trapping Performances with HfAlO Composite Oxide Thin Films in SONOS-type Nonvolatile Memory

Enhanced Memory Properties of HfO2-based Ferroelectric Capacitor by Inserting Al2O3/ZrO2 Stack Interfacial Layer

Metal Floating Gate Memory Device with SiO 2 /hfo 2 Dual-Layer As Engineered Tunneling Barrier

Enhanced charge storage performance in AlTi4Ox/Al2O3 multilayer charge trapping memory devices

Improvement of the Charge Retention of a Non-Volatile Memory by a Bandgap-Engineered Charge Trap Layer

Retention Enhancement in Low Power NOR Flash Array with High-κ–Based Charge-Trapping Memory by Utilizing High Permittivity and High Bandgap of Aluminum Oxide

Enlargement of Memory Window of Si Channel FeFET by Inserting Al2O3 Interlayer on Ferroelectric Hf0.5Zr0.5O2

Ultrathin Metal–Organic Framework Nanosheets as Nano‐Floating‐Gate for High Performance Transistor Memory Device

Improvement of Memory Characteristics of Charge-Trapping Memory Device by Using HfO$_2$/Al$_2$O$_3$ Laminate

High-performance Amorphous In-Ga-Zn-O Thin-Film Transistor Nonvolatile Memory with a Novel P-Sno/n-sno2 Heterojunction Charge Trapping Stack

Improved Memory Characteristics of A Novel TaN/Al2O3/TiO2/HfO2/SiO2/Si Structured Charge Trapping Memory

The Interface Inter-Diffusion Induced Enhancement of the Charge-Trapping Capability in Hfo2/Al2o3 Multilayered Memory Devices

Memory Effect of Metal—Insulator—Silicon Capacitors with SiO<sub>2</sub>/HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Dielectrics

Characteristics of atomic layer deposition-derived all-high-k-based structures for flash memory application

The Roles of the Dielectric Constant and the Relative Level of Conduction Band of High-K Composite with Si in Improving the Memory Performance of Charge-Trapping Memory Devices