Abstract:Abstract Plasmonic lithography, which uses the evanescent electromagnetic (EM) fields to generate image beyond the diffraction limit, has been successfully demonstrated as an alternative lithographic technology for creating sub-10 nm patterns. However, the obtained photoresist pattern contour in general exhibits a very poor fidelity due to the near-field optical proximity effect (OPE), which is far below the minimum requirement for nanofabrication. Understanding the near-field OPE formation mechanism is important to minimize its impact on nanodevice fabrication and improve its lithographic performance. In this work, a point-spread function (PSF) generated by a plasmonic bowtie-shaped nanoaperture (BNA) is employed to quantify the photon-beam deposited energy in the near-field patterning process. The achievable resolution of plasmonic lithography has successfully been enhanced to approximately 4 nm with numerical simulations. A field enhancement factor ( F ) as a function of gap size is defined to quantitatively evaluate the strong near-field enhancement effect excited by a plasmonic BNA, which also reveals that the high enhancement of the evanescent field is due to the strong resonant coupling between the plasmonic waveguide and the surface plasmon waves (SPWs). However, based on an investigation of the physical origin of the near-field OPE, and the theoretical calculations and simulation results indicate that the evanescent-field-induced rapid loss of high- k information is one of the main optical contributors to the near-field OPE. Furthermore, an analytic formula is introduced to quantitatively analyze the effect of the rapidly decaying feature of the evanescent field on the final exposure pattern profile. Notably, a fast and effective optimization method based on the compensation principle of the exposure dose is proposed to reduce the pattern distortion by modulating the exposure map with dose leveling. The proposed pattern quality enhancement method can open new possibilities in the manufacture of nanostructures with ultrahigh pattern quality via plasmonic lithography, which would find potentially promising applications in high density optical storage, biosensors, and plasmonic nanofocusing.

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Edge-based near-field photolithography optical proximity effect correction technique

Mask model analysis and its application in 28 OPC modeling

Lithography printability review: an application on advanced photomask production for enhancing mask yield and cycle time

Optimizing Sub-resolution Assist Features Using Test Pattern Method

A highly effective and efficient cost-function-reduction method for inverse lithography technique

ILT Approach for Compensating 3-D Mask Effects

Proximity Effect In Electron Beam Lithography

Mask Synthesis for Aerial Image Fidelity in Optical Lithography Using A Coarse-Grid-Approximation Level-Set Approach

Fast Level-Set-Based Inverse Lithography Algorithm for Process Robustness Improvement and Its Application

Source and Mask Co-Optimization Using A Gradient Based Method in Optical Lithography

Efficient measurement and optical proximity correction modeling to catch lithography pattern shift issues of arbitrarily distributed hole layer

A New Method of 2D Contour Extraction For Fast Simulation of Photolithographic Process

Analysis of the Effects on Ultra-Short Laser Pulse Beam Quality Caused by Errors in Optical Systems

A highly efficient optimization algorithm for pixel manipulation in inverse lithography technique

Enhancement of pattern quality in maskless plasmonic lithography via spatial loss modulation

Development of a Lithography Simulation Tool Set in Various Optical Conditions for Source Mask Optimization

DIRECT: An Efficient Optimization Scheme for Mask Generation Using Inverse Lithography

High Performance Source Optimization Using A Gradient-Based Method in Optical Lithography

A New Algorithm of Inverse Lithography Technology for Mask Complexity Reduction

Design and implementation of model-based optical correction system