Abstract:Inverse lithography technology (ILT) is one of the promising resolution enhancement techniques (RETs), as the advanced integrated circuits (IC) technology nodes still use the 193 nm light source. Among all the algorithms for ILT, the level-set-based ILT (LSB-ILT) is a feasible choice with good production result in practice. However, existing ILT algorithms optimize masks at nominal process condition without giving sufficient attention to the process variations, and thus the optimized masks show poor performance with focus and dose variations. In this paper, we put forward a new LSB-ILT algorithm for process robustness improvement with fast convergence. In order to account for the process variations in the optimization, we adopt a new form of the cost function by adding the objective function of process variation band (PV band) to the nominal cost. We also adopt the hybrid conjugate gradient (CG) method to reduce the runtime of the algorithm. We perform experiments on ICCAD 2013 benchmarks and the results show that our algorithm outperforms the top two winners of the ICCAD 2013 contest by 6.5%. We also adopt the attenuated phase shift mask (att-PSM) in the experiment with test cases from industry. The results show that our new algorithm has a fast convergence speed and reduces the process manufacturability index (PMI) by 38.77% compared with the LSB-ILT algorithm without the consideration of PV band.

A highly efficient optimization algorithm for pixel manipulation in inverse lithography technique

A highly effective and efficient cost-function-reduction method for inverse lithography technique

A Robust Pixel-Based RET Optimization Algorithm Independent of Initial Conditions

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A New Algorithm of Inverse Lithography Technology for Mask Complexity Reduction

DIRECT: An Efficient Optimization Scheme for Mask Generation Using Inverse Lithography

Efficient Mask Design for Inverse Lithography Technology Based on 2D Discrete Cosine Transformation (DCT)

Gradient-Based Source And Mask Optimization In Optical Lithography

Source and Mask Co-Optimization Using A Gradient Based Method in Optical Lithography

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A Gradient-Based Inverse Lithography Technology For Double-Dipole Lithography

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GPU-accelerated Inverse Lithography Technique

Regularized Level-Set-based Inverse Lithography Algorithm for IC Mask Synthesis

A Fast OPC Algorithm for IC Layout Based on 1-D Cells after Optimization of Gap Distribution

An analytic gradient-based inverse lithography approach for partially-coherent double-exposure lithography

Double-dipole mask-synthesis using inverse lithography technology

Inverse Lithography Physics-informed Deep Neural Level Set for Mask Optimization