Abstract:As process technology scales down to very deep sub-micron (VDSM) in semiconductor manufacturing technology, intrinsic size becomes close to or even shorter than the wavelength used for optical lithography. Thus, some distortions and deformations are introduced by optical proximity effects (OPE) mainly caused by the diffraction and interference of exposure light when layout patterns on a mask are transcribed to a wafer, which influence on the yield and performance of IC circuit. In order to compensate for the deformations, optical proximity correction (OPC) is the most commonly used methodology. Presently, the OPC method is to use a unitary toleration on the whole chip layer, which makes the run time of OPC algorithm longer, causes the size of GDSII files to follow exponential growth, and results in the cost of making mask grow immensely. Firstly, this paper proposes a self-adaptation OPC method with preprocessing function of patterns classification. According to the need of the correction precision, the OPC system divides patterns corrected into two groups with different toleration: critical patterns and general patterns, which enhance the efficiency of the OPC approach. Secondly, a model-based OPC method is presented based on pattern subsection and classification, which keeps the precision of the correction as well as enhances the efficiency. We also propose a rule-based OPC method with general, concise and complete correction rules, and achieve automatic-built rules-based and its looking-up. Thirdly, we also implement an OPC system, called MR-OPC; the MR-OPC system integrates both rule-based OPC and model-based OPC into a whole, so it can solve the confliction between the efficiency and precision. Experimental results show that the MR-OPC system we suggested has advantages of the efficiency and expansibility.

Efficient measurement and optical proximity correction modeling to catch lithography pattern shift issues of arbitrarily distributed hole layer

Application of Optical Proximity Correction Technology

A Fast OPC Algorithm for IC Layout Based on 1-D Cells after Optimization of Gap Distribution

Some studies on the interactions and propagating effects in OPC

AdaOPC 2.0: Enhanced Adaptive Mask Optimization Framework for Via Layers

An Improved Shape Shifting Method of Critical Area Extraction

A New Method of Implementing Hierarchical OPC

Edge-based near-field photolithography optical proximity effect correction technique

A portable pattern-based design technology co-optimization flow to reduce optical proximity correction run-time

Model-Based Dynamic Dissection in OPC

Mask model analysis and its application in 28 OPC modeling

Segmentation Optimization Method for Optical Proximity Correction Based on Lithography Model

Method for optical proximity correction based on a vector imaging model

Investigation on MBOPC convergence improvement with location-dependent correction factors aided by machine learning

OPC model calibration based on circle-sampling theorem

A New Level-Set-Based Inverse Lithography Algorithm for Process Robustness Improvement with Attenuated Phase Shift Mask

The Research on Alternating Phase-shifted Mask Design of 100 Nm Resolution

Design of polygon matching and comparison in IC layout

AdaOPC: A Self-Adaptive Mask Optimization Framework For Real Design Patterns

CAD System Adopting Alternating Phase-Shift Mask Technology

Fast Level-Set-Based Inverse Lithography Algorithm for Process Robustness Improvement and Its Application