The Research on Alternating Phase-shifted Mask Design of 100 Nm Resolution

LU Jing,Chen Baoqin,LIU Ming,Long Shibing,LI Ling
DOI: https://doi.org/10.3969/j.issn.1000-3819.2005.02.025
2005-01-01
Abstract:Phase-shift mask(PSM) technology is a strong candidate for practically enhancing the resolution of optical lithography, but there are still some problems in shifter assignment and placement. Proper change of layout on the basis of topography anlysis is one method to eliminate the phase conflict. Another method is to decompose the original design pattern into several alternating PSM sub-patterns based on geometrical rules and multiple-exposure of these sub-masks. Optical effect correction(OPC) is also useful to improve the resolution. The integrated of AltPSM and OPC will push the printable feature dimensions to the level of 100 nm with optical lithography.
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