Abstract:As process technology scales down to very deep sub-micron (VDSM) in semiconductor manufacturing technology, intrinsic size becomes close to or even shorter than the wavelength used for optical lithography. Thus, some distortions and deformations are introduced by optical proximity effects (OPE) mainly caused by the diffraction and interference of exposure light when layout patterns on a mask are transcribed to a wafer, which influence on the yield and performance of IC circuit. In order to compensate for the deformations, optical proximity correction (OPC) is the most commonly used methodology. Presently, the OPC method is to use a unitary toleration on the whole chip layer, which makes the run time of OPC algorithm longer, causes the size of GDSII files to follow exponential growth, and results in the cost of making mask grow immensely. Firstly, this paper proposes a self-adaptation OPC method with preprocessing function of patterns classification. According to the need of the correction precision, the OPC system divides patterns corrected into two groups with different toleration: critical patterns and general patterns, which enhance the efficiency of the OPC approach. Secondly, a model-based OPC method is presented based on pattern subsection and classification, which keeps the precision of the correction as well as enhances the efficiency. We also propose a rule-based OPC method with general, concise and complete correction rules, and achieve automatic-built rules-based and its looking-up. Thirdly, we also implement an OPC system, called MR-OPC; the MR-OPC system integrates both rule-based OPC and model-based OPC into a whole, so it can solve the confliction between the efficiency and precision. Experimental results show that the MR-OPC system we suggested has advantages of the efficiency and expansibility.

AdaOPC 2.0: Enhanced Adaptive Mask Optimization Framework for Via Layers

AdaOPC: A Self-Adaptive Mask Optimization Framework For Real Design Patterns

Application of Optical Proximity Correction Technology

A Fast OPC Algorithm for IC Layout Based on 1-D Cells after Optimization of Gap Distribution

DAMO: Deep Agile Mask Optimization for Full Chip Scale

Differentiable Edge-based OPC

Efficient measurement and optical proximity correction modeling to catch lithography pattern shift issues of arbitrarily distributed hole layer

CAMO: Correlation-Aware Mask Optimization with Modulated Reinforcement Learning

Delving Deeper into Mask Utilization in Video Object Segmentation

A New Method of Implementing Hierarchical OPC

VLSI Mask Optimization: From Shallow To Deep Learning

A self-training end-to-end mask optimization framework based on semantic segmentation network

Source and Mask Co-Optimization Using A Gradient Based Method in Optical Lithography

Genetic Algorithm-Based Optical Proximity Correction for DMD Maskless Lithography.

Some studies on the interactions and propagating effects in OPC

A portable pattern-based design technology co-optimization flow to reduce optical proximity correction run-time

Gradient-Based Source And Mask Optimization In Optical Lithography

High Performance Source Optimization Using A Gradient-Based Method in Optical Lithography

A new flexible method for re-running regional OPC to meet the ECO requirements

Block-based mask optimization for optical lithography

Model-Based Dynamic Dissection in OPC