Abstract:As process technology scales down to very deep sub-micron (VDSM) in semiconductor manufacturing technology, intrinsic size becomes close to or even shorter than the wavelength used for optical lithography. Thus, some distortions and deformations are introduced by optical proximity effects (OPE) mainly caused by the diffraction and interference of exposure light when layout patterns on a mask are transcribed to a wafer, which influence on the yield and performance of IC circuit. In order to compensate for the deformations, optical proximity correction (OPC) is the most commonly used methodology. Presently, the OPC method is to use a unitary toleration on the whole chip layer, which makes the run time of OPC algorithm longer, causes the size of GDSII files to follow exponential growth, and results in the cost of making mask grow immensely. Firstly, this paper proposes a self-adaptation OPC method with preprocessing function of patterns classification. According to the need of the correction precision, the OPC system divides patterns corrected into two groups with different toleration: critical patterns and general patterns, which enhance the efficiency of the OPC approach. Secondly, a model-based OPC method is presented based on pattern subsection and classification, which keeps the precision of the correction as well as enhances the efficiency. We also propose a rule-based OPC method with general, concise and complete correction rules, and achieve automatic-built rules-based and its looking-up. Thirdly, we also implement an OPC system, called MR-OPC; the MR-OPC system integrates both rule-based OPC and model-based OPC into a whole, so it can solve the confliction between the efficiency and precision. Experimental results show that the MR-OPC system we suggested has advantages of the efficiency and expansibility.

A new flexible method for re-running regional OPC to meet the ECO requirements

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A New Method of Implementing Hierarchical OPC

A fast OPC flow to match the ECO requirement

Soft: Smooth Opc Fixing Technique for Eco Process

Some studies on the interactions and propagating effects in OPC

Model-Based Dynamic Dissection in OPC

Application of Optical Proximity Correction Technology

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Differentiable Edge-based OPC

The ECO Process in Lithography of IC Flow

Segmentation Optimization Method for Optical Proximity Correction Based on Lithography Model

AdaOPC 2.0: Enhanced Adaptive Mask Optimization Framework for Via Layers

Optimizing Sub-resolution Assist Features Using Test Pattern Method

Efficient measurement and optical proximity correction modeling to catch lithography pattern shift issues of arbitrarily distributed hole layer

Source and Mask Co-Optimization Using A Gradient Based Method in Optical Lithography

An Automated and Fast OPC Algorithm for OPC-Aware Layout Design

AdaOPC: A Self-Adaptive Mask Optimization Framework For Real Design Patterns

Advances in OPC Technology and Development of ZOPC Tool

Design of polygon matching and comparison in IC layout

Investigation on MBOPC convergence improvement with location-dependent correction factors aided by machine learning