Abstract:As process technology scales down to very deep sub-micron (VDSM) in semiconductor manufacturing technology, intrinsic size becomes close to or even shorter than the wavelength used for optical lithography. Thus, some distortions and deformations are introduced by optical proximity effects (OPE) mainly caused by the diffraction and interference of exposure light when layout patterns on a mask are transcribed to a wafer, which influence on the yield and performance of IC circuit. In order to compensate for the deformations, optical proximity correction (OPC) is the most commonly used methodology. Presently, the OPC method is to use a unitary toleration on the whole chip layer, which makes the run time of OPC algorithm longer, causes the size of GDSII files to follow exponential growth, and results in the cost of making mask grow immensely. Firstly, this paper proposes a self-adaptation OPC method with preprocessing function of patterns classification. According to the need of the correction precision, the OPC system divides patterns corrected into two groups with different toleration: critical patterns and general patterns, which enhance the efficiency of the OPC approach. Secondly, a model-based OPC method is presented based on pattern subsection and classification, which keeps the precision of the correction as well as enhances the efficiency. We also propose a rule-based OPC method with general, concise and complete correction rules, and achieve automatic-built rules-based and its looking-up. Thirdly, we also implement an OPC system, called MR-OPC; the MR-OPC system integrates both rule-based OPC and model-based OPC into a whole, so it can solve the confliction between the efficiency and precision. Experimental results show that the MR-OPC system we suggested has advantages of the efficiency and expansibility.

Mask model analysis and its application in 28 OPC modeling

Efficient measurement and optical proximity correction modeling to catch lithography pattern shift issues of arbitrarily distributed hole layer

Silicon-Validated Power Delivery Modeling and Analysis on a 32-Nm DDR I/O Interface.

OPC model calibration based on circle-sampling theorem

Scratch-Concerned Yield Modeling for Ic Manufacturing Involved with A Chemical Mechanical Polishing Process

Application of Optical Proximity Correction Technology

Assembly Accuracy Analysis for Small Components with A Planar Surface in Large-Scale Metrology

A Silicon-Validated Methodology for Power Delivery Modeling and Simulation

Model-Based Dynamic Dissection in OPC

Source and Mask Co-Optimization Using A Gradient Based Method in Optical Lithography

Some studies on the interactions and propagating effects in OPC

ILT Approach for Compensating 3-D Mask Effects

Reduced basis method for source mask optimization

Block-based mask optimization for optical lithography

A Novel Opc Method to Reduce Mask Volume with Yield-Aware Dissection

Correction of remounting errors by masking reference points in small footprint polishing process.

Optimization of Graphical Parameter Extraction Algorithm for Chip-Level CMP Prediction Model Based on Effective Planarization Length

Modeling and Analysis of Uncertainty in On-Machine Form Characterization of Diamond-Machined Optical Micro-Structured Surfaces

Differentiable Edge-based OPC

The Research on Alternating Phase-shifted Mask Design of 100 Nm Resolution

Design and implementation of model-based optical correction system