Abstract:The effects of carbon in heavily phosphorus-doped Czochralski (HP-Cz) silicon (Si) substrates, with the concentrations across an order of magnitude from 1016 to 1017 cm−3, on the out-diffusion of phosphorus impurities within n/n+ epitaxial Si (Epi-Si) wafers have been investigated. It is found that the increase in the carbon concentration ([C]) from 1.0 × 1016 to 1.0 × 1017 cm−3 leads to the enhanced phosphorus out-diffusion within the n/n+ Epi-Si wafer when subjected to anneal at 1100 °C in an N2 or an O2 ambient or to anneal at 1150 °C in an N2 ambient, but hardly affects the phosphorus out-diffusion within the n/n+ Epi-Si wafer when subjected to anneal at 1150 °C in an O2 ambient. Based on the density functional theory calculations, it is derived that the increase in the [C] from 1.0 × 1016 to 1.0 × 1017 cm−3 in the HP-Cz Si substrate results in a significantly increased thermal equilibrium concentration of self-interstitial silicon (SiI) atoms at 1100 or 1150 °C, which, in turn, leads to the increased concentration of the SiI atoms that out-diffuse from the substrate to the epitaxial layer because the SiI atoms diffuse extremely fast in Si. Such a carbon-induced increase in the concentration of SiI atoms is believed to be responsible for the aforementioned enhanced phosphorus out-diffusion, which is predominantly dictated by the interstitialcy mechanism. In the case of anneal in the O2 ambient at sufficiently high temperatures such as 1150 °C, a large number of excessive SiI atoms injected into the Epi-Si wafer substantially mask the carbon enhancement effect on the phosphorus out-diffusion. Of technological significance, it is deduced that the [C] should be not higher than 1.0 × 1016 cm−3 in the HP-Cz Si wafers as the substrates of n/n+ Epi-Si wafers used for power devices.

Elimination of Phosphorus Vaporizing from Molten Silicon at Finite Reduced Pressure

High Phosphorus Doping of Epitaxial Silicon at Low Temperature and Very Low Pressure

Effect and Mechanism of Dephosphorization in Molten Silicon under Different Pressure Conditions

Kinetic Characterization of Phosphorus Removal from the Surface of Metallurgical Grade (mg) Silicon Droplets During Electromagnetic Levitation

Comprehensive Understanding on Phosphorus Precipitation in Heavily Phosphorus-Doped Czochralski Silicon

Thermodynamic Assessment of Phosphorus Removal From Si-Fe Levitated Droplets

A High-Efficiency and Energy-Saving Method for Purifying Industrial Silicon for Silicone Use

High concentration phosphorus doping of polycrystalline silicon by low temperature direct vapor phase diffusion of phosphine followed by rapid thermal annealing

Behavior of phosphorus during solidification of the Si-Fe-P ternary alloy melt used in purification of MG-Si

Polysilicon in situ phosphorus doping control over large concentration range using low temperature, low pressure chemical vapour deposition growth process

Doping of Phosphorus and Boron into Silicon by Solid-Phase Diffusion at Low Temperatures ( <650° C)

Separation of phosphorus from metallurgical-grade silicon via micro negative pressure during oxidative ladle refining

Diffusion Mechanism of Phosphorus from Phosphorous Vapor in Amorphous Silicon Dioxide Film Prepared by Thermal Oxidation

Low-temperature enhancement in the extraction of phosphorus from metallurgical-grade silicon by simultaneously re-constructing phosphorus-rich phases of Ca3P2 and CaAl2Si2-P

P removal from Si by Si-Ca-Al alloying-leaching refining: Effect of Al and the CaAl2Si2 phase

A comprehensive model of high-concentration phosphorus diffusion in silicon

Physical Mechanism Underlying the Enhancement Effect of Carbon in Heavily Phosphorus-Doped Czochralski Silicon Substrate on Phosphorus Out-Diffusion Within N/n+ Epitaxial Wafer

Removal of Alkaline Impurities in a Polysilicon Gate Structure by Phosphorus Diffusion

Elimination of Severe Shunting Problems Due to Air-Side Electrode Formation on Evaporated Poly-Si Thin-Film Solar Cells on Glass

Low-Temperature Epitaxy of Phosphorus Doped Si and Si1-Xgex Films by Rtp/Vlp-Cvd

Reduction of oxygen during the crystal growth in heavily antimony-doped Czochralski silicon