Abstract:Heavily phosphorus-doped Czochralski (HP-CZ) silicon is an important substrate material for manufacturing power electronic devices. The high concentration of phosphorus impurities may be supersaturated during the crystal growth of HP-CZ silicon or device manufacturing. Thus, understanding phosphorus precipitation in HP-CZ silicon is of technological significance. Herein, a panoramic view of phosphorus precipitation in HP-CZ silicon is presented in terms of crystallography, thermodynamics, and kinetics. It is found that the orthorhombic SiP precipitates can form during the crystal growth of HP-CZ silicon and also during the post-anneals of HP-CZ silicon at 450–1050 °C. Along with increasing annealing temperature, the formed SiP precipitates tend to adopt the platelet, polyhedron, and sphere-like shapes. Moreover, the excess point defects, i.e., silicon self-interstitials and vacancies, are found to affect phosphorus precipitation occurring in the low and high temperature regimes in different ways. In light of the kinetics of phosphorus precipitation at different temperatures, it is deduced that phosphorus precipitation follows a growth law in compliant with Ham's theory to a large extent. As an important output of this work, the temperature-dependent phosphorus solubilities in the dislocation-free silicon, which have been hardly acquired previously, are derived on the basis of investigating phosphorus precipitation in a set of HP-CZ silicon wafers with different phosphorus concentrations. Moreover, the derived solvus line for the phosphorus impurities in silicon could be a beneficial supplement to the existing phase diagram of the Si–P binary system in the extremely silicon-rich corner.

P removal from Si by Si-Ca-Al alloying-leaching refining: Effect of Al and the CaAl2Si2 phase

Impurity removal from Si by Si-Ca-Mg ternary alloying-leaching system

Behavior of phosphorus during solidification of the Si-Fe-P ternary alloy melt used in purification of MG-Si

Enhancing P removal from primary Si by P-containing Al2Si2Sr phase during Al–Si solvent refining

Impurity phases and their removal in Si purification with Al–Si alloy using transition metals as additives

Low-temperature enhancement in the extraction of phosphorus from metallurgical-grade silicon by simultaneously re-constructing phosphorus-rich phases of Ca3P2 and CaAl2Si2-P

Removal of Impurities from Metallurgical Grade Silicon During Ga-Si Solvent Refining

The use of vacuum refining to separate Ca, Al, and P from crude metallurgical grade silicon

Mechanism of AlP Modifying the Morphology of Si in Al-20Si Alloys Based on Experimental Studies and First-Principles Calculations

Effect of Si Content on the Morphology Evolution of the Si Primary Dendrites in Al-Si Alloy Solvent Refining Process

Influence of Iron, Aluminum, Calcium, Titanium and Vanadium Impurities Removal from Silicon Based on Cu-catalyzed Chemical Leaching

Leaching Behaviors of Impurities in Metallurgical-Grade Silicon with Hafnium Addition

Refinement of primary Si in Al–20%Si alloy by MRB through phosphorus additions

Effects of solidification rate on the leaching behavior of metallic impurities in metallurgical grade silicon

Comprehensive Understanding on Phosphorus Precipitation in Heavily Phosphorus-Doped Czochralski Silicon

Enhancing the separation of Fe/Al/Ca impurities from metallurgical silicon to purify by slagging-directional solidification

Refinement of Primary Si Phase in Hypereutectic Al–Si Alloy by Electrically Assisted Solidification with P Addition

Calculating Models of Mass Action Concentration for Thermodynamic Properties of Phosphorus, Iron and Aluminum in Silicon Dilute Solutions

Analysis of Fe-, Cu-, Mg- and Sr-Based Phases in Al–Si Alloys: Role of P Addition

Formation mechanism and conditions of fine primary silicon being uniformly distributed on single αAl matrix in Al-Si alloys

Possibility of Complete Collecting Eutectic Si and Primary Si as Purified Si During Al-Si Solvent Refining with Zr Additions