Abstract:Heavily phosphorus-doped Czochralski (HP-CZ) silicon is an important substrate material for manufacturing power electronic devices. The high concentration of phosphorus impurities may be supersaturated during the crystal growth of HP-CZ silicon or device manufacturing. Thus, understanding phosphorus precipitation in HP-CZ silicon is of technological significance. Herein, a panoramic view of phosphorus precipitation in HP-CZ silicon is presented in terms of crystallography, thermodynamics, and kinetics. It is found that the orthorhombic SiP precipitates can form during the crystal growth of HP-CZ silicon and also during the post-anneals of HP-CZ silicon at 450–1050 °C. Along with increasing annealing temperature, the formed SiP precipitates tend to adopt the platelet, polyhedron, and sphere-like shapes. Moreover, the excess point defects, i.e., silicon self-interstitials and vacancies, are found to affect phosphorus precipitation occurring in the low and high temperature regimes in different ways. In light of the kinetics of phosphorus precipitation at different temperatures, it is deduced that phosphorus precipitation follows a growth law in compliant with Ham's theory to a large extent. As an important output of this work, the temperature-dependent phosphorus solubilities in the dislocation-free silicon, which have been hardly acquired previously, are derived on the basis of investigating phosphorus precipitation in a set of HP-CZ silicon wafers with different phosphorus concentrations. Moreover, the derived solvus line for the phosphorus impurities in silicon could be a beneficial supplement to the existing phase diagram of the Si–P binary system in the extremely silicon-rich corner.

Low-temperature enhancement in the extraction of phosphorus from metallurgical-grade silicon by simultaneously re-constructing phosphorus-rich phases of Ca3P2 and CaAl2Si2-P

A High-Efficiency and Energy-Saving Method for Purifying Industrial Silicon for Silicone Use

Separation of phosphorus from metallurgical-grade silicon via micro negative pressure during oxidative ladle refining

P removal from Si by Si-Ca-Al alloying-leaching refining: Effect of Al and the CaAl2Si2 phase

Behavior of phosphorus during solidification of the Si-Fe-P ternary alloy melt used in purification of MG-Si

Comprehensive Understanding on Phosphorus Precipitation in Heavily Phosphorus-Doped Czochralski Silicon

KEY FACTORS FOR THE SEPARATION OF SILICON AND IRON DURING PHOSPHORUS RECOVERY FROM SLAG DISCHARGED FROM THE DOUBLE-SLAG REFINING PROCESS

Dephosphorization of Metallurgical-Grade Silicon by Electromagnetic Levitation

Efficient extraction of phosphate from dephosphorization slag by hydrochloric acid leaching

Simple and Highly Effective Purification of Metallurgical-Grade Silicon Through Metal-Assisted Chemical Leaching

Novel Enhancing Impurities Purification from Silicon Powder Through Metal-Catalyzed Chemical Corrosion

Study of the Preparation of High Purity Silicon by a New Electro-thermal Metallurgy Method

Enhancing the separation of Fe/Al/Ca impurities from metallurgical silicon to purify by slagging-directional solidification

Refinement of Primary Si Phase in Hypereutectic Al–Si Alloy by Electrically Assisted Solidification with P Addition

Experimental Study on Phosphorus Removal from Ferrosilicon Alloys under Electromagnetic Levitation

Sequential separation and recovery of phosphorus and lithium from lithium phosphate slag by selective extraction-precipitation

Dephosphorization of high silicon hot metal based on double slag converter steelmaking technology

Low-temperature method for desiliconization of polymetallic slags by ammonium bifluoride solution

Effects of solidification rate on the leaching behavior of metallic impurities in metallurgical grade silicon

Impurity removal from Si by Si-Ca-Mg ternary alloying-leaching system

Synchronous extraction of Pt, Zr and Ce from spent catalysts via SoG-Si scraps melting collection by regulating Si reduction based on a new fluorine-containing slag