Abstract:Heavily phosphorus-doped Czochralski (HP-CZ) silicon is an important substrate material for manufacturing power electronic devices. The high concentration of phosphorus impurities may be supersaturated during the crystal growth of HP-CZ silicon or device manufacturing. Thus, understanding phosphorus precipitation in HP-CZ silicon is of technological significance. Herein, a panoramic view of phosphorus precipitation in HP-CZ silicon is presented in terms of crystallography, thermodynamics, and kinetics. It is found that the orthorhombic SiP precipitates can form during the crystal growth of HP-CZ silicon and also during the post-anneals of HP-CZ silicon at 450–1050 °C. Along with increasing annealing temperature, the formed SiP precipitates tend to adopt the platelet, polyhedron, and sphere-like shapes. Moreover, the excess point defects, i.e., silicon self-interstitials and vacancies, are found to affect phosphorus precipitation occurring in the low and high temperature regimes in different ways. In light of the kinetics of phosphorus precipitation at different temperatures, it is deduced that phosphorus precipitation follows a growth law in compliant with Ham's theory to a large extent. As an important output of this work, the temperature-dependent phosphorus solubilities in the dislocation-free silicon, which have been hardly acquired previously, are derived on the basis of investigating phosphorus precipitation in a set of HP-CZ silicon wafers with different phosphorus concentrations. Moreover, the derived solvus line for the phosphorus impurities in silicon could be a beneficial supplement to the existing phase diagram of the Si–P binary system in the extremely silicon-rich corner.

Calculating Models of Mass Action Concentration for Thermodynamic Properties of Phosphorus, Iron and Aluminum in Silicon Dilute Solutions

MD Simulation and Transport Property Analysis of Silicon in High-Temperature Molten Fluoride Salts Electrolyte

Behavior of phosphorus during solidification of the Si-Fe-P ternary alloy melt used in purification of MG-Si

EXPERIMENTAL DETERMINATION OF ACTIVITY INTERACTION COEFFICIENTS OF COMPONENTS IN Si-B-Fe AND Si-B-Al TERNARY SYSTEMS AT 1723 K

A comprehensive model of high-concentration phosphorus diffusion in silicon

Thermodynamic Assessment of Phosphorus Removal From Si-Fe Levitated Droplets

Investigation on Structures of Aluminum Melts Containing Small Amount of Silicon Element

Liquid-Phase Diffusion of Phosphorus Atoms in Laser-Doped Crystalline Silicon Solar Cells

P removal from Si by Si-Ca-Al alloying-leaching refining: Effect of Al and the CaAl2Si2 phase

Critical Evaluation and Thermodynamic Re-Optimization of the Si–P and Si–Fe–P Systems

Comprehensive Understanding on Phosphorus Precipitation in Heavily Phosphorus-Doped Czochralski Silicon

Theoretical Investigation of Thermodynamic Properties of the Al-Si-Fe Ternary Alloy

Theoretical Simulation and Experimental Study of Phosphorus Concentration Profiles in Laser Doped Crystalline Silicon Solar Cells

Model of phosphorus diffusion in silicon for highly doped solar cell emitter layer

Effects of Si solution in θ-Al13Fe4 on phase transformation between Fe-containing intermetallic compounds in Al alloys

Application of molecular interaction volume model on removing impurity aluminum from metallurgical grade silicon by vacuum volatilization

Numerical simulation of granular silicon growth and silicon fines formation process in polysilicon fluidized bed

Modelling of Dealumination of Silicon-Aluminum Molecular Sieves

Atomistic simulations of carbon diffusion and segregation in liquid silicon

Dynamic Investigation of the Finite Dissolution of Silicon Particles in Aluminum Melt with A Lower Dissolution Limit

Solute diffusion calculation in Fe-Si and Fe-Cr-Si multicomponent alloys