Abstract:This work presents an excellent metal‐oxide‐semiconductor field‐effect transistor (MOSFET) on a diamond substrate derived from a five‐inch (110) highly preferred polycrystalline diamond film. Forty‐four percentage of devices show normally‐off operation with a maximum current density of 400 mA mm−1, while 56% of devices demonstrate normally‐on operation with a maximum current density of 525 mA mm−1. Diamond exhibits large application potential in the field of power electronics, owing to its excellent and desirable electronic properties. However, the main obstacles to its development originate from the small‐sized single‐crystal wafers and the instability of the electrical conductivity. This work presents a metal‐oxide‐semiconductor field‐effect transistor (MOSFET) on a diamond substrate derived from a five‐inch (110) highly preferred polycrystalline diamond film. The MOSFETs with excellent performance are fabricated by combining an H‐terminated channel and an epitaxially grown boron‐doped layer as the source/drain contacts of the diamond devices. According to the electrical statistical results of ≈110 devices on the polycrystalline diamond substrate, 44% of devices show normally‐off operation with a maximum current density of 400 mA mm−1, while 56% of devices demonstrate normally‐on operation with a maximum current density of 525 mA mm−1. The normally‐off characteristics are more related to the higher amounts of nitrogen concentration than the grain boundaries. The stable boron‐doped source and drain provide a high concentration of holes, which facilitate transport in the surface p‐type channel induced by the H‐termination. The characteristics of the MOSFETs are inspiring for the fabrication of complementary inverter circuits on large diamond wafers.

Preparation and Characterization of (110) Diamond Films Used for Field-Effect Transistors

High performance ionic-liquid-gated air doped diamond field-effect transistors

HfAlOx/Al2O3 Bilayer Dielectrics for a Field Effect Transistor on a Hydrogen-Terminated Diamond

H-Terminated Diamond MOSFETs on High-Quality Diamond Film Grown by MPCVD

MOSFETs on (110) C–H Diamond: ALD Al2O3/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization

Performance of normally off hydrogen-terminated diamond field-effect transistor with Al2O3/CeB6 gate materials

High mobility hydrogen-terminated diamond FET with h-BN gate dielectric using pickup method

High quality nanocrystalline diamond films grown by RF-HFCVD

Preparation and Characterization of Ultrananocrystalline Diamond Films in H 2 /ar/ch 4 Gas Mixtures System with Novel Filament Structure

Structural and optical characterizations of nanostructured diamond films grown on Si(001) substrates

Preparation and Characterization for Nanodiamond Thin Film for Electronic Field Emission Applications

Hf-Contacted High-Performance Air-Stable N-Type Carbon Nanotube Transistors

Electrical Characteristics of Diamond MOSFET with 2DHG on a Heteroepitaxial Diamond Substrate

Normally Off Hydrogen-Terminated Diamond Field-Effect Transistor With Ti/TiO x Gate Materials

High Performance of Normally‐On and Normally‐Off Devices with Highly Boron‐Doped Source and Drain on H‐Terminated Polycrystalline Diamond

Ultrahigh On/Off Ratio (110) Diamond Transistors with Exceptional Reproducibility of Normally Off Characteristics

Large V TH of Normally-OFF Field Effect Transistor With Yttrium Gate Material Directly Deposited on Hydrogen-Terminated Diamond

Low-Temperature Growth Of Ultra-Thin Nano-Crystalline Diamond Films By Hfcvd In A Ch4/H-2 Mixture

Theoretical study of the interface engineering for H-diamond field effect transistors with h-BN gate dielectric and graphite gate

Synthesis of Oriented Textured Diamond Films on Silicon Via Hot Filament Chemical Vapor Deposition

Diamond FET Biosensor Fabrication and Application