Abstract:Ge(+) ions are implanted into fused silica glass at room temperature and a fluence of 1 x 10(17) cm(-2). The as-implanted samples are annealed in O(2), N(2) and Ar atmospheres separately. Ge(0), GeO and GeO(2) coexist in the as-implanted and annealed samples. Annealing in different atmospheres at 600 degrees C leads each composite to change its content. After annealing at 1000 degrees C, there remains some amount of Ge(0) in the substrates. However, the content of Ge decreases due to out-diffusion. After annealing in N(2), Si-N composite is formed. The absorption peak of GeO appears at 240 nm after annealing in O(2) atmosphere, and a new absorption peak occurs at 418 nm after annealing in N(2) atmosphere, which is attributed to the Si-N composite. There is no absorption peak appearing after annealing in Ar atmosphere. Transmission electron microscopic images confirm the formation of Ge nanoparticles in the as-implanted sample and GeO(2) nanoparticles in the annealed sample. In the present study, the GeO content and the GeO(2) content depend on annealing temperature and atmosphere. Three photoluminescence emission band peaks at 290, 385 and 415 nm appear after ion implantation and they become strong with the increase of annealing temperature below 700 degrees C, and their photoluminescences recover to the values of as-grown samples after annealing at 700 degrees C. Optical absorption and photoluminescence depend on the annealing temperature and atmosphere.

Impacts of Thermal Annealing on Hydrogen-Implanted Germanium and Germanium-on-Insulator Substrates

Evolution of Interface Chemistry and Dielectric Properties of Hfo2/Ge Gate Stack Modulated by Gd Incorporation and Thermal Annealing

Investigation of GaAs Wafer Surface Blistering by Hydrogen Implantation

The Study on Defects of Germanium-on-Insulator Fabricated by a Low Temperature Smart-Cut Process

Impact of post-ion implantation annealing on Se-hyperdoped Ge

Effect of Hydrogen Annealing on the Property of Low-temperature Epitaxial Growth of Sige Thin Films on Si Substrate

Thermal History Effect on the Nucleation of Oxygen Precipitates in Germanium Doped Cz-silicon Studied by High-Energy X-ray Diffraction

Influence of High Pressure Annealing on Electrical Properties of Surface Layer of Neutron Irradiated or Germanium-Doped Czochralski-Grown Silicon

Study of Surface Morphology in GaAs by Hydrogen and Helium Implantation at Elevated Temperature

Defects in Ge-doped Cz-Si Annealed under High Stress

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Effect of annealing on interfacial and band alignment characteristics of HfO 2/SiO 2 gate stacks on Ge substrates

Low-temperature preparation of polycrystalline germanium thin films by Al-induced crystallization

Comprehensive investigation of Thermal Induced Reorganization of Porous-Germanium structures

Effect of Hydrogen Annealing on Voids in arge-Diameter Czochralski Silicon

EFFECTS OF ION-IMPLANTATION ON THE ANNEALING BEHAVIOR OF AMORPHOUS-GERMANIUM AND GOLD BILAYERS

Tracking interfacial changes of graphene/Ge(110) during in-vacuum annealing

Formation of high quality nano-crystallized Ge films on quartz substrates at moderate temperature

Thermal Annealing Effects on a Compositionally Graded SiGe Layer Fabricated by Oxidizing a Strained SiGe Layer

Optical and structural properties of Ge-ion-implanted fused silica after annealing in different ambient conditions