Abstract:Doping of silicon nanocrystals (Si-NCs) is one of the major challenges for silicon nanoscale devices. In this work, phosphorus (P) doping in Si-NCs which are embedded within an amorphous silicon matrix is realized together with the growth of Si-NCs by plasma-enhanced chemical vapor deposition under a tunable substrate direct current (DC) bias. The variation of phosphorus concentration with substrate bias can be explained by the competition of bonding processes of Si-Si and P-Si bonds. The formation of Si-Si and P-Si bonds is differently influenced by the ion bombardment controlled by the substrate bias, due to their bonding energy difference. We have studied the influences of grain size on P doping in Si-NCs. Free carrier concentration, which is provided by activated P atoms, decreases with decreasing grain size due to increasing formation energy and activation energy of P atoms incorporated in Si-NCs. Furthermore, we have studied the P locations inside Si-NCs and hydrogen passivation of P in the form of P-Si-H complexes using the first-principles method. Hydrogen passivation of P can also contribute to the reduced free carrier concentration in smaller Si-NCs. These results provide valuable understanding of P doping in Si-NCs.

Orientation-Dependent Charge Carrier Confinement in A Nanopatterned Silicon Film

Effects of Charge Screening and Surface Properties on Signal Transduction in Field Effect Nanowire Biosensors

Doping Si Nanocrystals Embedded in Sio2 with P in the Framework of Density Functional Theory

Different Charging Behaviors Between Electrons and Holes in Si Nanocrystals Embedded in SiN X Matrix by the Influence of Near-Interface Oxide Traps

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Microscopic Observation of Lateral and Vertical Charge Transportation in Si Nanocrystals Sandwiched by Amorphous SiC Layers

Electron and hole charging effect of nanocrystalline silicon in double-oxide barrier structure

Charge Storage in Si-nanocrystals Embedded NOS Structure Characterized by Kelvin Probe Force Microscopy

Origin of Electron and Hole Charging Current Peaks in Nanocrystal-Si Quantum Dot Floating Gate MOS Structure

Domain Control in Ferroelectric Nanodots Through Surface Charges

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Orientation‐Dependent Host–Dopant Interactions for Manipulating Charge Transport in Conjugated Polymers

The Charge Storage of the Nc-Si Layer

Nanoscale Quantification of Charge Injection and Transportation Process in Si-nanocrystal Based Sandwiched Structure.

Enhanced carrier mobility in Si nano-crystals via nanoscale phosphorus doping

Quantum Confinement Of Crystalline Silicon Nanotubes With Nonuniform Wall Thickness: Implication To Modulation Doping

Temperature-dependent carrier transport behaviors in phosphorus-doped silicon nanocrystals/silicon carbide multilayers

Charge Trapping in Surface Accumulation Layer of Heavily Doped Junctionless Nanowire Transistors

Size Dependence of Phosphorus Doping in Silicon Nanocrystals

Resonant Tunneling Characteristics in Crystalline Silicon/Nanocrystalline Silicon Heterostructure Diodes