Abstract:In light of the established differences between the quantum confinement effect and the electron affinities between hydrogen-passivated C and Si quantum dots, we carried out theoretical investigations on SiC quantum dots, with surfaces uniformly terminated by C-H or Si-H bonds, to explore the role of surface terminations on these two aspects. Surprisingly, it was found that the quantum confinement effect is present (or absent) in the highest occupied (or lowest unoccupied) molecular orbital of the SiC quantum dots regardless of their surface terminations. Thus, the quantum confinement effect related to the energy gap observed experimentally (Phys. Rev. Lett., 2005, 94, 026102) is contributed to by the size-dependence of the highest occupied states; the absence of quantum confinement in the lowest unoccupied states is in contrary to the usual belief based on hydrogen-passivated C quantum dots. However, the cause of the absence of the quantum confinement in C nanodots is not transferable to SiC. We propose a model that provides a clear explanation for all findings on the basis of the nearest-neighbor and next-nearest-neighbor interactions between the valence atomic p-orbital in the frontier occupied/unoccupied states. We also found that the electron affinities of the SiC quantum dots, which closely depend on the surface environments, are negative for the C-H termination and positive for the Si-H termination. The prediction of negative electron affinities in SiC quantum dots by simple C-H termination indicates a promising application for these materials in electron-emitter devices. Our model predicts that GeC quantum dots with hydrogen passivation exhibit similar features to SiC quantum dots and our study confirms the crucial role that the surface environment plays in these nanoscale systems.

Quantum Confinement Effect In Silicon Carbide Nanostructures: A First Principles Study

Electronic Transport Properties of Silicon Carbide Molecular Junctions: First-Principles Study

The theoretical DFT study of electronic structure of thin Si/SiO2 quantum nanodots and nanowires

Quantum conductance of silicon-doped carbon wire nanojunctions

Density Functional Calculations on Silicon Carbide Nanostructures

Quantum Confinement Effect on Li-Segregation in Si Nanowires

Spin-orbit Coupling and Electric-Dipole Spin Resonance in a Nanowire Double Quantum Dot

Uniaxial-stress Effects on Electronic Properties of Silicon Carbide Nanowires

The Surface Termination Effect on the Quantum Confinement and Electron Affinities of 3C-Sic Quantum Dots: A First-Principles Study

Quantum Confinement of Si Nanosphere with Radius Smaller Than 1.2 Nm

A first-principles study of the electronic, vibrational, and optical properties of planar SiC quantum dots

Site-dependent properties of quantum emitters in nanostructured silicon carbide

Quantum Confinement Effects of the Lowest Conduction Band States in Semiconductor Quantum Dots

Quantum Confinement Of Crystalline Silicon Nanotubes With Nonuniform Wall Thickness: Implication To Modulation Doping

A theoretical study of the electronic properties of hydrogenated spherical‐like SiC quantum dots with C ‐rich and Si ‐rich compositions

Ab-initio Study of Size and Strain Effects on the Electronic Properties of Si Nanowires

The Growth Mechanism of Silicon Nanowires and Their Quantum Confinement Effect

Confinement of electrons in size modulated silicon nanowires

First-principles Study of the Effects of Si Doping on Geometric and Electronic Structure of Closed Carbon Nanotube

Quantum transport in an ambipolar InSb nanowire quantum dot device

Quantum Confinement Energy in Nanocrystalline Silicon Dots from High-Frequency Conductance Measurement