Abstract:In this paper, a novel 4H-SiC double reduced surface field (RESURF) LDMOS with a one-step doped Ptop layer and a Pburried layer (SDP LDMOS) has been proposed to optimize the electric field distribution and enhance the breakdown voltage. By using the step doping (SD) technology, the Ptop layer and the Pburried layer introduced extra electric field peaks in the drift region, hence the lateral and the vertical electric field distributions have been optimized simultaneously and the breakdown voltage has been improved significantly. In addition, the Pburried layer facilitated the depletion of the drift region. Therefore, for similar breakdown voltage rating, higher doping concentration of the drift region and smaller specific on-resistance have been achieved. It was found by the finite element numeric simulation that the proposed device exhibited a high breakdown voltage (BV) of 1934 V and a low specific on-resistance (Ron,sp) of 4.04 mΩ·cm 2 (at V GS = 10 V, V DS = 1 V), resulting in a 49% higher Baliga's figure of merit (FOM, defined as BV 2 /Ron,sp) 925.8 MW/cm 2 than that of the conventional double RESURF LDMOS.

A New Soi High Voltage Device Based on E-Simox Substrate

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

High-voltage LED Driver Based on SOI Process

Simulation for a Novel Vertical SOI Configuration

Novel SOI technology - H+ implantation, bonding and separation

A New Double Epitaxial Layer Dielectric Isolation Technology For Hvics

Realization of 850 v breakdown voltage LDMOS on Simbond SOI

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Membrane High Voltage Devices - A Milestone Concept In Power Ics

Ultra-Fast Ligbts And Superjunction Devices In Membrane Technology

Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Novel Void Embedded Design for Total Ionizing Dose Hardening of Silicon-on-Insulator MOSFET

Numerical Modeling of Linear Doping Profiles for High-Voltage Thin-Film Soi Devices

Experimental Results on Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Fabrication of Silicon-on-insulator-multilayer Structure by Epitaxial Layer Transfer

Fabrication of Silicon-on-Insulator Structure with Si3N4 As Buried Insulating Films by Epitaxial Layer Transfer

Lateral Unbalanced Super Junction (Usj)/3d-Resurf for High Breakdown Voltage on Soi

Computer Simulation for the Formation of the Insulator Layer of Silicon-On-Insulator Devices by N+ and O+ Co-Implantation

Development of High Voltage Thin Film SOI Device with Linearly Doped Drift Region

A Novel SiC LDMOS with Electric Field Optimization by Step Doping Technology

Study of full isolation SOI technology by highly selective and self-stopping formation of porous oxidized silicon