Photoluminescence and Electroluminescence from B-doped Nanocrystal Si/SiO2 Multilayers

Hongcheng Sun,Yu Liu,Jun Xu,Wei Li,Tao Lin,Wei Xu,Kunji Chen

DOI: https://doi.org/10.1109/group4.2010.5643346

2010-01-01

Abstract:B-doped nc-Si/SiO2 multilayers were formed using a PECVD system with subsequent thermal annealing. Room temperature photoluminescence and electroluminescence was investigated and compared with that of undoped nc-Si/SiO2 samples.

What problem does this paper attempt to address?

Synthesis, Optical Properties And Theoretical Modelling Of Discrete Emitting States In Doped Silicon Nanocrystals For Bioimaging

B F P McVey,D König,X Cheng,P B O'Mara,P Seal,X Tan,H A Tahini,S C Smith,J J Gooding,R D Tilley

DOI: https://doi.org/10.1039/c8nr05071f

IF: 6.7

2018-01-01

Nanoscale

Abstract:The creation of multiple emission pathways in quantum dots (QDs) is an exciting prospect with fundamental interest and optoelectronic potential. For the first time, we report multiple emission pathways in semiconductor nanocrystals (NCs) where the number of emission pathways desired is controlled by the number of dopant atoms per quantum dot. The origin of additional emission pathways is explained by interactions between dopant states and NC energy levels. Density functional theory (DFT) calculations of undoped 2.3 nm silicon (Si NCs) and the same NCs doped with 2 interstitial Cu atoms show good agreement to experiment. Such calculations provide valuable data to explain the changes in optical transitions due to the Cu dopant in terms of transition energies, quantum yield and dopant position as a function of dopants per NC. Changes in the optical properties of Si NCs induced by dopant concentration include extended excitation range and enhanced absorption coefficients, emission redshifts of up to 60 nm, and a two-fold increase in quantum yields up to 22%. The optical properties of doped NCs lead to significant bioimaging improvements illustrated by in vitro cell imaging, including redshifted excitation wavelengths away from natural autofluorescence and enhanced fluorescent signals.
Light Emitting Devices Based on Nanocrystalline-Silicon Multilayer Structure

M. Wang,A. Anopchenko,A. Marconi,E. Moser,S. Prezioso,L. Pavesi,G. Pucker,P. Bellutti,L. Vanzetti

DOI: https://doi.org/10.1016/j.physe.2008.08.009

IF: 3.369

2008-01-01

Physica E Low-dimensional Systems and Nanostructures

Abstract:In this paper we report the visible–near-infrared light emission properties of nanocrystalline silicon (nc-Si) light emitting devices (LEDs) based on nc-Si/SiO2 multilayer structures. Multilayer structures of silicon-rich oxide (SRO) and SiO2 were grown by plasma enhanced chemical vapor deposition (PECVD) and studied by transmission electron microscopy (TEM) and ellipsometry. A higher nc-Si density in the multilayer samples than in the homogeneous sample was found by comparing photoluminescence (PL) intensities. The PL band located in the near-infrared region can be tuned by the size of nc-Si, which in the multilayer sample is controlled by the thickness of the SRO layer. The multilayer LED shows a much larger current density under low applied voltages than the LED based on a single thick layer. The significant lower driving voltage and enhanced light emission intensity suggest higher power efficiency in multilayer LED. It is believed that the improvement of the LED characteristics is due to the higher nc-Si density caused by the multilayer structure.
Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Dawei Di,Ivan Perez-Wurfl,Lingfeng Wu,Yidan Huang,Alessandro Marconi,Andrea Tengattini,Aleksei Anopchenko,Lorenzo Pavesi,Gavin Conibeer

DOI: https://doi.org/10.1063/1.3671671

IF: 4

2011-01-01

Applied Physics Letters

Abstract:Silicon nanocrystals have shown attractive properties for photonic and photovoltaic applications. We demonstrate all-Si light-emitting diodes based on boron-doped Si nanocrystal/c-Si p-n heterojunction structure, which show electroluminescence in the visible/infrared regions. The electroluminescence spectra of these diodes can be modified by changing the quantum confining barriers from SiO2 to Si3N4. Our results are an important demonstration of electroluminescence from boron-doped Si nanocrystals—a wide band gap absorber material for third generation photovoltaics.
Electro-Luminescence from Un-Doped and Doped Nanocrystalline Si/Sio2 Multilayers

D. Y. Wei,T. Wang,H. C. Sun,Y. Liu,D. Y. Chen,J. Xu,Z. Y. Ma,K. J. Chen

DOI: https://doi.org/10.1109/group4.2008.4638119

2008-01-01

Abstract:Electroluminescence devices based on nanocrystalline Si/SiO2 multilayers were fabricated and the luminescence can be observed both from vertical and lateral direction. Moreover, P-doped nanocrystalline Si/SiO2 multilayers were prepared and the improved electro-luminescence characteristics were achieved.
Photoluminescence of Tb3+ Doped SiNx Films Grown by Plasma-Enhanced Chemical Vapor Deposition

Zhizhong Yuan,Dongsheng Li,Minghua Wang,Peiliang Chen,Daoren Gong,Lei Wang,Deren Yang

DOI: https://doi.org/10.1063/1.2358301

IF: 2.877

2006-01-01

Journal of Applied Physics

Abstract:Room temperature photoluminescence (PL) properties of the Tb3+ ion implanted nonstoichiometric silicon nitride (Tb3+:SiNx) and silicon dioxide (Tb3+:SiOx) were studied. The films were deposited by plasma-enhanced chemical vapor deposition and then annealed at different temperatures for 1h in flowing N2 before or after the implantation. Results show that there are four intense PL peaks due to the intra-4f transitions of Tb3+ in the wavelength from 470to625nm for both kinds of films. Moreover, after postannealing at 1000°C, the integrated PL intensity of Tb3+:SiNx is much higher than that of Tb3+:SiOx. The energy transfer from the defect related energy levels to the Tb3+ ions will enhance the D45→Fk7 (k=3–6) luminescence of Tb3+ ions.
Doping Effect in Si Nanocrystals/SiO2 Multilayers

Dongke Li,Peng Lu,Minqing Qian,Jun Xu,Wei Li,Kunji Chen

DOI: https://doi.org/10.1088/1742-6596/864/1/012012

2017-01-01

Abstract:Doping in Si nano-crystals (Si NCs) is currently a great challenge to develop the high-performance nano-devices. Here, we fabricated P-doped Si NCs by PECVD in Si/SiO2 multilayered structures after annealing at high temperature. It is demonstrated experimentally that P dopants can be incorporated into Si NCs substitutionally. Furthermore, we found that the photoluminescence properties of Si NCs can be drastically modified by P doping in Si NCs/SiO2 multilayers with the ultra-small size. A subband light emission centred at 1200nm is observed, which can be ascribed to the radiative recombination via the P-induced deep level in the gap of the Si NCs. Interestingly, it is also found that the subband emission can be enhanced obviously by B and P co-doping. Our results suggest that doping plays an important role in the electronic structures and optoelectronic characteristics of Si NCs, which provide a new route to realize the Si NCs-based optical and electronical devices.
The Structural and Optical Properties of nc-Si/SiO2 Multilayers

De-yuan WEI,De-yuan CHEN,Pei-gao HAN,Zhong-yuan MA,Jun XU,Kun-ji CHEN

2008-01-01

Chinese Journal of Luminescence

Abstract:Amorphous-Si∶H/SiO2 multilayers with various sub-layer thicknesses were layer-by-layer deposited and in situ plasma oxidized in a plasma-enhanced chemical vapor deposition system. Nano-crystalline Si can be formed in the initial a-Si sub-layers based on the constrained crystallization principal. Raman scattering and TEM measurements were used to characterize the structure of multilayers during the formation of nc-Si/SiO2 multilayers. It was found that the annealing temperature and the a-Si∶H sub-layer thickness influence on the crystallization process obviously. Photoluminescence was observed at room temperature and the PL peak position is about 750 nm. Light-emitting Diode with MOS (Metal-Oxide-Semiconductor) structure was designed and fabricated by evaporating Al electrodes on both the upper and the bottom surface of the sample. Electroluminescence at room temperature was also observed by the naked eye with the turn-on voltage of 6 V. The EL spectra contain two luminescence bands located at 520 nm and 650 nm, respectively. The influence of nc-Si and interface of nc-Si and SiO2 on the luminescent character of the device was briefly discussed.
Comparative Study on P and B Doped Nano-Crystalline Si Multilayers

Jiaming Chen,Dongke Li,Yangyi Zhang,Yicheng Jiang,Jun Xu,Kunji Chen

DOI: https://doi.org/10.1016/j.apsusc.2020.146971

IF: 6.7

2020-01-01

Applied Surface Science

Abstract:We fabricated P and B-doped Si nanocrystals (Si NCs) by high temperature annealing doped amorphous Si/SiO2 multilayers. We found that B impurity had the higher doping efficiency but the less activation efficiency than P atoms in Si NCs. The electrical properties of Si NCs films were systematically investigated by temperature-dependent conductivity and Hall measurements. The carrier transport properties exhibited the different characteristics after P and B-doping, especially the metal-like conductance performance at high doping levels. Our results revealed the different P and B doping behaviors in Si NCs, which is helpful for developing the Si NCs-based devices.
Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers

Peigao Han,Zhongyuan Ma,ZhengYue Xia,Deyuan Chen,Jun Xu,Bo Qian,San Chen,Wei Li,XinFan Huang,Kunji Chen,Duan Feng,韩培高,马忠元,夏正月,陈德媛,徐骏,钱波,陈三,李伟,黄信凡,陈坤基

DOI: https://doi.org/10.1088/1009-1963/16/5/040

2007-01-01

Chinese Physics

Abstract:Enhanced photoluminescence (PL) at room temperature from thermally annealed a-Si:H/SiO2 multilayers is observed through the step-by-step thermal post-treatment. The correlation between the PL, and the crystallization process is studied using temperature-dependent PL, Raman, cross section high-resolution transmission electron microscopy (X-HRTEM) and x-ray diffraction (XRD) techniques. An intensified PL band around 820 nm is discovered from the sample annealed near the crystallization onset temperature, which is composed of two peaks centred at 773 ran and 863 nm, respectively. It is found that the PL band centred at 863 nm is related to the pseudo nanocrystal (p-nc-Si) silicon, and the PL, band centred at 773 nm is attributed to Si = O bonds stabilized in the p-nc-Si surface.
Electroluminescence from nano-crystalline Si/ SiO2 structures embedded in pn junctions

D.Y. Chen,X. Wang,D.Y. Wei,T. Wang,J. Xu,Z.Y. Ma,W. Li,K.J. Chen,W.H. Shi,Q.M. Wang

DOI: https://doi.org/10.1016/j.spmi.2008.04.002

IF: 3.22

2008-01-01

Superlattices and Microstructures

Abstract:Phosphorous-doped and boron-doped amorphous Si thin films as well as amorphous SiO2/Si/ SiO2 sandwiched structures were prepared in a plasma enhanced chemical vapor deposition system. Then, the p–i–n structures containing nano-crystalline Si/ SiO2 sandwiched structures as the intrinsic layer were prepared in situ followed by thermal annealing. Electroluminescence spectra were measured at room temperature under forward bias, and it is found that the electroluminescence intensity is strongly influenced by the types of substrate. The turn-on voltages can be reduced to 3 V for samples prepared on heavily doped p-type Si (p+-Si) substrates and the corresponding electroluminescence intensity is more than two orders of magnitude stronger than that on lightly doped p-type Si (p-Si) and ITO glass substrates. The improvements of light emission can be ascribed to enhanced hole injection and the consequent recombination of electron–hole pairs in the luminescent nanocrystalline Si/ SiO2 system.
Influence of Si Crystallization Evolution on 1.54 Μm Luminescence in Er-doped Si/Al2O3 Multilayer

Wang Jun-Zhuao,Shi Zhuo-Qiong,Lou Hao-Nan,Zhang Xin-Luan,Zuo Ze-Wen,Pu Lin,Ma En,Zhang Rong,Zheng You-Liao,Lu Fang,Shi Yi

DOI: https://doi.org/10.7498/aps.58.4243

IF: 0.906

2009-01-01

Acta Physica Sinica

Abstract:The crystallization evolution of the nanostructured Si （ns-Si） in the Er-doped Si/Al 2 O 3 multilayer fabricated by using pulsed laser deposition technique and its effects on the Er 3+ luminescence at 1.54 μm are investigated. Raman scattering and transmission electron microscopy measurements are used to characterize the microstructure evolution of the ns-Si during annealing treatment processes. The maximum photoluminescence intensity is obtained in the sample with ultrathin ns-Si sublayers annealed at 600—700 ℃, where the density, the size of Si nanocrystals, the interaction distance, and the optimized local environment for effectively activating the Er 3+ are well controlled. From the analysis of the decay process of time-dependent luminescence, two decay channels are considered, the fast and slow decay channels. The bulk-like Si is responsible for the fast process and the Si nanocrystals are responsible for the slow decay process.
Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode

Teng Sun,Dongke Li,Jiaming Chen,Yuhao Wang,Junnan Han,Ting Zhu,Wei Li,Jun Xu,Kunji Chen

DOI: https://doi.org/10.3390/nano13061109

IF: 5.3

2023-03-20

Nanomaterials

Abstract:Developing high-performance Si-based light-emitting devices is the key step to realizing all-Si-based optical telecommunication. Usually, silica (SiO2) as the host matrix is used to passivate silicon nanocrystals, and a strong quantum confinement effect can be observed due to the large band offset between Si and SiO2 (~8.9 eV). Here, for further development of device properties, we fabricate Si nanocrystals (NCs)/SiC multilayers and study the changes in photoelectric properties of the LEDs induced by P dopants. PL peaks centered at 500 nm, 650 nm and 800 nm can be detected, which are attributed to surface states between SiC and Si NCs, amorphous SiC and Si NCs, respectively. PL intensities are first enhanced and then decreased after introducing P dopants. It is believed that the enhancement is due to passivation of the Si dangling bonds at the surface of Si NCs, while the suppression is ascribed to enhanced Auger recombination and new defects induced by excessive P dopants. Un-doped and P-doped LEDs based on Si NCs/SiC multilayers are fabricated and the performance is enhanced greatly after doping. As fitted, emission peaks near 500 nm and 750 nm can be detected. The current density-voltage properties indicate that the carrier transport process is dominated by FN tunneling mechanisms, while the linear relationship between the integrated EL intensity and injection current illustrates that the EL mechanism is attributed to recombination of electron–hole pairs at Si NCs induced by bipolar injection. After doping, the integrated EL intensities are enhanced by about an order of magnitude, indicating that EQE is greatly improved.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Photoluminescence of Tb3+-doped SiNx films with different Si concentrations

Zhizhong Yuan,Dongsheng Li,Minghua Wang,Daoren Gong,Peihong Cheng,Peiliang Chen,Deren Yang

DOI: https://doi.org/10.1016/j.mseb.2007.07.023

2008-01-01

Abstract:Tb3+-doped SiNx films (SiNx:Tb3+) were prepared by plasma-enhanced chemical vapor deposition (PECVD) and ion-implantation. And the effects of the SiNx substrates with different Si concentrations on the light emission of Tb3+ were investigated. Experimental results show that two groups of photoluminescence (PL) peaks of Tb3+ ions were observed in different SiNx:Tb3+ films. And the PL intensity increased with annealing temperature. The defect states of N and Si dangling bonds of the SiNx substrate had little effect on the light emission of Tb3+ after the high-temperature annealing. For the annealed Si-rich SiNx (SRN) film, Si nanoclusters precipitated from the host matrix. The increased oxygen concentration and the optical absorption due to the band tail states and Si nanoclusters of the annealed SRN film decreased the light emission of Tb3+ ions.
Electrically Driven Luminescence of Nanocrystalline Si/SiO2 Multilayers on Various Substrates

T. Wang,D. Y. Wei,H. C. Sun,Y. Liu,D. Y. Chen,G. R. Chen,J. Xu,W. Li,Z. Y. Ma,L. Xu,K. J. Chen

DOI: https://doi.org/10.1016/j.physe.2008.08.001

IF: 3.369

2008-01-01

Physica E Low-dimensional Systems and Nanostructures

Abstract:Amorphous-Si:H/SiO2 multilayers were fabricated on various substrates by alternatively changing the ultra-thin amorphous Si films deposition and in situ plasma oxidation processes. Uniform silicon nanodots with controllable size were formed by combining the rapid thermal annealing and furnace annealing techniques as revealed by cross-sectional transmission electron microscopy. Light-emitting diodes based on Al/(nc-Si/SiO2) multilayers/Si substrate/Al structures were fabricated and electrically driven luminescence was demonstrated at room temperature. It was found that the substrate had a significant impact on the carrier injection efficiency and the luminescence intensity. The turn-on voltages of the device on p+-Si and p-Si substrate were 2.2 and 8V, respectively. Meanwhile, electroluminescence intensity of the device on p+-Si substrate was five times higher than that on p-Si substrate under the same power supply, which means the heavily doped substrate is helpful for enhancing the carrier injection efficiency.
Enhancement of electroluminescence in p–i–n structures with nano-crystalline Si/SiO<sub>2</sub> multilayers

D Y Chen,D Y Wei,J Xu,P G Han,X Wang,Z Y Ma,K J Chen,W H Shi,Q M Wang

DOI: https://doi.org/10.1088/0268-1242/23/1/015013

IF: 2.048

2008-01-01

Semiconductor Science and Technology

Abstract:Nano-crystalline Si/SiO2 multilayers were prepared by alternately changing the ultra-thin amorphous Si film deposition and the in situ plasma oxidation process followed by the post-annealing treatments. Well-defined periodic structures can be achieved with 2.5 nm thick SiO2 sublayers. It is shown that the size of formed nano-crystalline Si is about 3 nm. Room temperature electroluminescence can be observed and the spectrum contains two luminescence bands located at 650 nm and 520 nm. In order to improve the hole injection probability, p-i-n structures containing a nanocrystalline Si/SiO2 luminescent layer were designed and fabricated on different p-type substrates. It is found that the turn-on voltage of p-i-n structures is obviously reduced and the luminescence intensity increases by 50 times. It is demonstrated that the use of a heavy-doped p-type substrate can increase the luminescence intensity more efficiently compared with the light-doped p-type substrate due to the enhanced hole injection.
Pseudo Nanocrystal Silicon Induced Luminescence Enhancement in A-Si /sio 2 Multilayers

Han Pei-Gao,Ma Zhong-Yuan,Xia Zheng-Yue,Chen De-Yuan,Xu Jun,Qian Bo,Chen San,Li Wei,Huang Xin-Fan,Chen Kun-Ji,Feng Duan

DOI: https://doi.org/10.1088/1009-1963/16/5/040

2007-01-01

Abstract:Enhanced photoluminescence (PL) at room temperature from thermally annealed a-Si:H/SiO2 multilayers is observed through the step-by-step thermal post-treatment. The correlation between the PL and the crystallization process is studied using temperature-dependent PL, Raman, cross section high-resolution transmission electron microscopy (X-HRTEM) and x-ray diffraction (XRD) techniques. An intensified PL band around 820 nm is discovered from the sample annealed near the crystallization onset temperature, which is composed of two peaks centred at 773 nm and 863 nm, respectively. It is found that the PL band centred at 863 nm is related to the pseudo nanocrystal (p-nc-Si) silicon, and the PL band centred at 773 nm is attributed to Si = O bonds stabilized in the p-nc-Si surface.
Photoluminescence from Silicon Nanocrystals in Encapsulating Materials

Z. Deng,X. D. Pi,J. J. Zhao,D. Yang

DOI: https://doi.org/10.1016/j.jmst.2013.01.006

2013-01-01

Abstract:Naturally oxidized freestanding silicon nanocrystals (Si NCs) are incorporated in commonly used encapsulating materials to explore the photoluminescent application of Si NCs in device structures such as solid-state lighting light-emitting diodes (LEDs) and solar cells. The quantum yield of Si NCs before the incorporation has reached about 45% at the excitation wavelength of 370 nm without any special surface modification. It is found that medium loadings, e.g., 5 wt% of Si NCs in encapsulating materials help to obtain high external quantum efficiency (EQE) of the mixtures of Si NCs and encapsulating materials. The curing of encapsulating materials significantly reduces EQE. Among all the encapsulating materials investigated in this work, silicone-OE6551 enables the highest EQE (21% at excitation wavelength λex = 370 nm) after curing. Based on current findings, we have discussed the continuous efforts to advance the photoluminescent application of Si NCs.
Photoluminescence of nc-Si/SiN superlattices embedded in optical microcavities

San Chen,Bo Qian,Kunji Chen,Zhanhong Cen,Yansong Liu,Peigao Han,Zhongyuan Ma,Jun Xu,Wei Li,XinFan Huang

2006-01-01

Abstract:We fabricate a-Si/a-SiNz superlattices and a one-dimensional amorphous silicon nitride photonic crystal microcavity by plasma enhancement chemical vapor deposition (PECVD). To improve the light-emitting efficiency of the nc-Si/a-SiNz superlattices, which are made from a-Si/a-SiNz superlattices by laser annealing, an nc-Si quantum dot array is inserted into the photonic crystal microcavity. Raman spectroscopy and transmission electron microscopy analysis show that nc-Si with a size of 4 nm, which is close to the designed thickness of the a-Si sublayers, is formed in the a-Si sublayers. Owing to microcavity effects, the PL peak of the nc-Si/a-SiNz superlattices embedded in the microcavity is strongly narrowed, and the intensity of the PL is enhanced by two orders of magnitude with respect to the emission of A/2-thick nc-Si/a-SiNz superlattices. Light emission at a cavity-resonant frequency from the nc-Si/a-SiNz superlattices is enhanced while other frequencies are forbidden. This leads to the narrowing of the PL spectrum and enhancement of the intensity.
Photoluminescence During the Crystallization of A-Si∶h/sio2 Multilayers

Zhongyuan Ma,Han Pei-Gao,Wei Li,San Chen,Bo Qian,Jingdong Xu,Xu Ling,Huang Xin-Fan,Kunji Chen,D. L. Feng

2006-01-01

Abstract:a-Si∶H/SiO2 multilayers with different thickness of a-Si∶H were layer by layer deposited and in situ plasma oxidized by plasma enhanced chemical vapor deposition system.Size-controlled nc-Si/SiO2 multilayers were obtained through step-by-step thermal annealing of a-Si∶H/SiO2 multilayers including dehydrogenation,rapid thermal annealing,quasi-static annealing.The change of photoluminescence from a-Si∶H/SiO2 to nc-Si/SiO2 was traced through step-by-step post-treatment combined with Raman,FTIR and TEM.The origin of the change of photoluminescence at different stage of thermal annealing is investigated.The relation between the change of photoluminescence and microstructure of the samples is discussed in detail.
Photoluminescence of Erbium–oxygen-Codoped Silicon Multilayers Prepared by Molecular Beam Epitaxy

F Xu,YL Fan,ZM Jiang

DOI: https://doi.org/10.1016/j.tsf.2005.08.228

IF: 2.1

2006-01-01

Thin Solid Films

Abstract:Erbium–oxygen-codoped silicon multilayer film, which consists of alternate erbium–oxygen-codoped silicon layers and oxygen-doped silicon layers, was synthesized by molecular beam epitaxy. Er3+-related luminescence from erbium–oxygen-codoped multilayer film is stronger than that of erbium–oxygen-codoped monolayer film and shows a weak temperature quenching behaviour. These improvements may be explained by the effect of O-doped Si layers in the multilayer film. The O-doped Si layers have a wide gap which prohibits the energy backtransfer effectively. At the same time, photogenerated carriers from silicon nanocrystals in O-doped Si layers could transfer the energy to neighboring Er3+ ions in Er–O-codoped Si layers by a tunneling process, thus enhancing the Er3+-related luminescence.

Photoluminescence and Electroluminescence from B-doped Nanocrystal Si/SiO2 Multilayers

Synthesis, Optical Properties And Theoretical Modelling Of Discrete Emitting States In Doped Silicon Nanocrystals For Bioimaging

Light Emitting Devices Based on Nanocrystalline-Silicon Multilayer Structure

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Electro-Luminescence from Un-Doped and Doped Nanocrystalline Si/Sio2 Multilayers

Photoluminescence of Tb3+ Doped SiNx Films Grown by Plasma-Enhanced Chemical Vapor Deposition

Doping Effect in Si Nanocrystals/SiO2 Multilayers

The Structural and Optical Properties of nc-Si/SiO2 Multilayers

Comparative Study on P and B Doped Nano-Crystalline Si Multilayers

Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers

Electroluminescence from nano-crystalline Si/ SiO2 structures embedded in pn junctions

Influence of Si Crystallization Evolution on 1.54 Μm Luminescence in Er-doped Si/Al2O3 Multilayer

Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode

Photoluminescence of Tb3+-doped SiNx films with different Si concentrations

Electrically Driven Luminescence of Nanocrystalline Si/SiO2 Multilayers on Various Substrates

Enhancement of electroluminescence in p–i–n structures with nano-crystalline Si/SiO<sub>2</sub> multilayers

Pseudo Nanocrystal Silicon Induced Luminescence Enhancement in A-Si /sio 2 Multilayers

Photoluminescence from Silicon Nanocrystals in Encapsulating Materials

Photoluminescence of nc-Si/SiN superlattices embedded in optical microcavities

Photoluminescence During the Crystallization of A-Si∶h/sio2 Multilayers

Photoluminescence of Erbium–oxygen-Codoped Silicon Multilayers Prepared by Molecular Beam Epitaxy