Abstract:Sulphur-doped and boron-sulphur co-doped diamond thin films were prepared by using chemical vapour deposition on p-type Si (100) and HTHP-diamond (100) substrates. The structures and properties of CVD diamond films were investigated with atom force microscope (AFM), Raman spectrum, sanning tunneling microscopy (STM) and current imaging tunneling current spectroscopy (CITS). Comparing the structures and properties of the doped diamond films grown on Si and HTHP diamond substrates, we find that the films deposited on Si substrates are composed of spherical grains with size of one hundred nanometer, the doped diamond films on Si substrates consist of large grains with a high fraction of grain boundaries due to the successive secondary nucleation,and the roughness of the films is estimated to be around 18.5nm. The doped diamond films on HTHP diamond substrates are composed of nanometer crystal grains with the sizes of 10—50nm and the film surface is flat with the roughness estimated to be around 1.8nm. Raman and resistivity measurements reveal that the films deposited on HTHP diamond substrates have much higher quality, fewer defects and lower stress, and higher conductivity than the films grown on Si substrates. Current imaging tunnelling current spectroscopy (CITS) images indicate that some grain boundaries and crystalline facets near the grain boundaries are he high electron emission regions. However, the grain boundaries and crystalline facets of the doped diamond films on HTHP diamond substrates have uniform electron emission currents, which indicates that the doped atoms are uniformly distributed in that films. The local I-V characteristics for films deposited on Si or HTHP diamond substrates indicate the n-type conduction.

Field Emission Property of Hydrogenated Chemical Vapor Deposited Diamond Films Studied by Scanning Tunneling Microscopy.

Observation of a Non Fowler–Nordheim Field-Induced Electron Emission Phenomenon from Chemical Vapor Deposited Diamond Films

The Intrinsic Relation Between Field Electron Emission and Structure Characteristics of Amorphous Diamond Film

Effect of Surface Termination on Electronic Structure of Nano-Crystalline Diamond Film

Electron Field Emission from Diamond-Like Carbon

Modeling of the Electron Field Emission Process in Polycrystalline Diamond and Diamond-Like Carbon Thin Films

Study of Field Electron Emission from Nanocrystalline Diamond Thin Films Grown from A N-2/Ch4 Microwave Plasma

A Study of Field Electron Emission Phenomenon Associated with Amorphous Diamond Thin Films

Electronic Structures of Hydrogenated and Oxygenated Boron-Doped Diamond Films

Field emission characteristics of surface-reconstructed heavily phosphorus-doped homoepitaxial diamond

Study of Instability in the Field Electron Emission from Amorphous Diamond Films

Field Electron Emission from Carbon Containing Thin Films

Characterization of homoepitaxial and heteroepitaxial diamond films grown by chemical vapor deposition

A Field Emission Study of the Critical Parameters of Amorphous Carbon Films Deposited on a Variety of Carbonaceous Substrates

Microstructural Modification of Diamond-Graphite Nanohybrid Films Via Adjusting Deposition Temperatures for Enhanced Electron Field Emission

Field emission from diamond and related films

Field Emission from Nanodiamonds Embedded Diamond-Like Carbon Films

Nanostructured Diamond Film on Etched Silicon and Its Field Emission Behavior

Field Emission Properties of Diamondlike Carbon Films Deposited by Ion Beam Assisted Deposition

Effects of the Surface Treatment of Silicon Substrate on the Field Emission Characteristic of A Silicon and Amorphous Diamond Cold Cathode Emitter

Optical and Electronic-Properties of Amorphous Diamond