Field emission characteristics of surface-reconstructed heavily phosphorus-doped homoepitaxial diamond

Takatoshi Yamada,Hisato Yamaguchi,Yuki Kudo,Ken Okano,Shin-ichi Shikata,Christoph E. Nebel
DOI: https://doi.org/10.1116/1.2709904
2007-01-01
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Abstract:The authors report about field emission from reconstructed phosphorus-doped diamond surfaces. Field emission from reconstructed surfaces is compared with that of hydrogen plasma treated and wet chemical oxidized surfaces. The threshold field of reconstructed surface is 16V∕μm, while 28 and 44V∕μm are required for oxidized and H-terminated surfaces, respectively. Field emission models are introduced to discuss the data by taking into account the electron affinities of diamond surfaces. For the first time, the authors also show field emission stabilities for reconstructed, oxidized, and H-terminated diamonds.
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