Study of vacuum microelectronic device using zinc oxide nanowires by low temperature solution phase method

Fang, B.,She, J.C.,Liu, J.,Xu, N.S.

DOI: https://doi.org/10.1109/IVNC.2009.5271700

2009-01-01

Abstract:This work has developed techniques for fabrication of gated field emission device using ZnO nanowires (NWs) based on both microfabrication techniques and low temperature (~80 degC) solution grown method.

What problem does this paper attempt to address?

Pulsed-laser Treatment for Lowering Resistance and Enhancing Field Emission of Solution-Grown ZnO Nanowires

She, J.C.,Xu, C.J.,He, H.,Xu, N.S.

DOI: https://doi.org/10.1109/ivnc.2009.5271636

2009-01-01

Abstract:One dimensional ZnO nanostructures prepared by low temperature solution-phase methods have been investigated for a number of potential applications. In these applications, they take an important function as charge transport path in the devices. Thus, the electrical conductivity, carrier mobility and ZnO-substrate junction are crucial for device performance. One comment way for this purpose is to dope ZnO NWs in synthesis process. However, it is found that doping can be difficult in aqueous systems. It is because the dopant species can easily form aquo ions and not be incorporated into the crystal lattice. Although alternative methods such as post-thermal-annealing can be employed, such a high temperature process is not compatible for most of the devices fabrication procedure. Therefore, it is necessary to develop new techniques for this purpose. Here, the authors report the investigation of effects of pulsed-laser treatment on the conductivity and field emission of ZnO NWs.
Stable, Self-Ballasting Field Emission from Zinc Oxide Nanowires Grown on an Array of Vertically Aligned Carbon Nanofibers

C. Li,Y. Zhang,M. Mann,P. Hiralal,H. E. Unalan,W. Lei,B. P. Wang,D. P. Chu,D. Pribat,G. A. J. Amaratunga,W. I. Milne

DOI: https://doi.org/10.1063/1.3380597

IF: 4

2010-01-01

Applied Physics Letters

Abstract:A structure composed of zinc oxide nanowires (ZNWs) grown hydrothermally on an array of vertically aligned carbon nanofibers (CNFs) was fabricated and its field emission properties determined and compared with bare CNF arrays. The combination produced a macroscopic turn-on field of 1.2 V/μm which was found to be the lowest reported from ZNWs deposited on a two-dimensional substrate and much less than the equivalent CNFs array (5.2 V/μm). Crucially, field emission was found to be much more stable at higher pressures of 5×10−6 mbar without exhibiting current degradation for a fixed external field, while emitting with a current density of 1 mA/cm2, the current density typically required for backlighting and field emission displays. We propose a self-ballasting mechanism, in which the low carrier density in the zinc oxide prevents current runaway in the presence of adsorbed species.
Field Emission From a MOSFET-Controlled ZnO-Nanowire Cold Cathode

Wenjie Yang,JunCong She,Shaozhi Deng,Ning Xu

DOI: https://doi.org/10.1109/TED.2012.2220548

2012-01-01

Abstract:Field emission from a MOSFET-controlled ZnO nanowire (NW) cathode is reported. The emission current was modulated in four orders of magnitude (from 0.2 nA to 1.15 μA ) by tuning the MOSFET gate voltage from 0.8385 to 1.5255 V. The modulation of the emission current showed an exponential relationship with the MOSFET gate voltage. The MOSFET control can dramatically reduce the emission current fluctuation, i.e., from 61.4% to 3.2%, at a current level of ~ 650 nA. The related mechanisms responsible for the improvement on field-emission current stability, the correlation between the vacuum breakdown of the NWs, and the failure of the MOSFET were discussed. The technique combines cold-cathode nanomaterials with mature solid-state technology to produce a reliable cathode in an on-chip form, which shows promising potential for modern vacuum micro-/nanosized electronic device applications.
Fabrication and Characterization of Gated ZnO Nanowire Field Electron Emitters

Laitang Luo,Juncong She,Shaozhi Deng,Jun Chen,Ningsheng Xu

DOI: https://doi.org/10.1109/ivnc.2016.7551526

2016-01-01

Abstract:Nanofabrication procedure was developed to obtain uniform zinc oxide (ZnO) nanowire arrays. The geometric uniformity of the nanowire and the surface smoothness were improved by optimizing the fabrication processes. Array of gated ZnO nano-emitter was fabricated to realize the low driving voltage triode structure.
Synthesis of ZnO Nanowires for Thin Film Network Transistors

S. H. Dalal,H. E. Unalan,Y. Zhang,Pritesh Hiralal,L. Gangloff,Andrew J. Flewitt,Gehan A. J. Amaratunga,William I. Milne

DOI: https://doi.org/10.1117/12.799598

2008-01-01

Abstract:Zinc oxide nanowire networks are attractive as alternatives to organic and amorphous semiconductors due to their wide bandgap, flexibility and transparency. We demonstrate the fabrication of thin film transistors (TFT)s which utilize ZnO nanowires as the semiconducting channel. These thin film transistors can be transparent and flexible and processed at low temperatures on to a variety of substrates. The nanowire networks are created using a simple contact transfer method that is easily scalable. Apparent nanowire network mobility values can be as high as 3.8 cm(2)/VS (effective thin film mobility: 0.03 cm(2)/VS) in devices with 20 mu m channel lengths and ON/OFF ratios of up to 10(4).
Zinc Oxide Nanowire Networks for Macroelectronic Devices

Husnu Emrah Unalan,Yan Zhang,Pritesh Hiralal,Sharvari Dalal,Daping Chu,Goki Eda,K. B. K. Teo,Manish Chhowalla,William I. Milne,Gehan A. J. Amaratunga

DOI: https://doi.org/10.1063/1.3120561

IF: 4

2009-01-01

Applied Physics Letters

Abstract:Highly transparent zinc oxide (ZnO) nanowire networks have been used as the active material in thin film transistors (TFTs) and complementary inverter devices. A systematic study on a range of networks of variable density and TFT channel length was performed. ZnO nanowire networks provide a less lithographically intense alternative to individual nanowire devices, are always semiconducting, and yield significantly higher mobilites than those achieved from currently used amorphous Si and organic TFTs. These results suggest that ZnO nanowire networks could be ideal for inexpensive large area electronics.
Fabrication of Large-Area Arrays of Coaxial Gated ZnO Nanowire Field Emitters for Vacuum Microelectronics Applications

Long Zhao,Yuanming Liu,Zhipeng Zhang,Juncong She,Shaozhi Deng,Ningsheng Xu,Jun Chen

DOI: https://doi.org/10.1109/ivnc.2017.8051570

2017-01-01

Abstract:The feasibility of preparation of nanowire on glass favors the realization of large area devices, which makes nanowire field emitter arrays (FEAs) good candidate for large-area vacuum microelectronics applications. In this study, a coaxial gated ZnO nanowire FEAs was fabricated. Effective emission current modulation by the gate voltage was achieved and the addressing capability was demonstrated.
Field Emission Properties of Zinc Oxide Nanowires Fabricated by Thermal Evaporation

Weiwei Wang,Gengmin Zhang,Ligang Yu,Xin Bai,Zhaoxiang Zhang,Xingyu Zhao

DOI: https://doi.org/10.1016/j.physe.2006.08.008

2007-01-01

Abstract:Arrays of randomly oriented zinc oxide (ZnO) nanowires were fabricated on silicon wafers via a simple thermal evaporation method. During the fabrication, the temperature around the substrate was below 500°C. The products were analyzed by conventional means and determined to be single crystals of wurtzite-type ZnO that grew along the c-axis. These nanowires were 10–100nm in diameter and 10–100μm in length, suggesting a possible high field enhancement factor. The dependence of the field emission current on the anode–cathode voltage (I–V behavior) of the ZnO nanowire arrays was measured in a lab-built ultrahigh vacuum system with a base pressure of 10−7Pa. After surface cleaning by heat treatment, two characteristic electric fields, under which 10μA/cm2 and 1mA/cm2 current densities were extracted, were measured to be 4.0 and 4.7V/μm, respectively. As observed with a transparent anode, emission occurred uniformly over the whole sample surface. A 72h-long test on emission stability was performed under a constant voltage of 2.75kV. The current dropped occasionally to approximately 80% of the initial value during the test owing to the poor adherence of the nanowires to the substrate. These preliminary results have shown the perspective of, as well as a major drawback to, a ZnO nanowire array being developed into a cold electron source to be used in future electronic devices.
Tuning the Electrical Properties of Zno-Si Nano-Contacts and Its Effect on Field Electron Emission from Zno Nanowires

X. Y. Wu,J. C. Shc,S. Z. Deng,J. Chen,N. S. Xu

2011-01-01

Abstract:ZnO nanowire (NW) is one of the promising cathode materials for vacuum micro/nano electronic devices. Optimization on its field emission performance is one of the important issues. In present study we explored the effect of ZnO-Si (n(++) doped) nanojunctions electrical properties on field emission. Arrays of individual ZnO NWs on Si nanorods were fabricated. The electrical and field emission measurements were in-situ performed using nano-manipulated probes. The ZnO-Si n-n junction showed a lower junction barrier of 0.3 similar to 0.6 eV, with good uniformity of 50% in electrical properties. Moreover, by applying strain on the Si nanorod to narrow its band gap, the effective contact resistance of the ZnO-Si nanojunction was dramatically decreased up to 10 times at a strain of 10%. The junction barrier was decreased to similar to 0.1 eV, showing significant enhancement on field electron emission. This work directly demonstrated that (i) the effect of electrical nano-contact is of great important for vacuum nano-electronic devices; (ii) heavily n-type doped semiconductor with narrower band is promising be used as cathode electrode.
Realization and characterization of nano electromechanical devices based on ZnO nanowires

Rong Zhu

DOI: https://doi.org/10.1109/NEMS.2011.6017566

2011-01-01

Abstract:Realization techniques for integrating zinc oxide (ZnO) nanowire into micro electromechanical structures to form nano devices at low temperature are reviewed. Two main strategies are focused on: one is based on controllable dielectrophoretic assembly, and another is using electric-field assisted wet chemical growth. Functional properties of the fabricated devices including electrical contacts, photosensitivity, thermoelectricity, and piezoelectricity are summarized to demonstrate their application prospects.
Fabrication of ZnO Nanowires by Vapor-Phase Deposition and Their Field Emission Properties

Zhang Qifeng,Rong Yi,Chen Xianxiang,Zhang Gengmin,Zhang Zhaoxiang,Xue Zengquan,Chen Changqi,Wu Jinlei

DOI: https://doi.org/10.3969/j.issn.1674-4926.2006.07.014

2006-01-01

Chinese Journal of Semiconductors

Abstract:Unoriented ZnO nanowires are fabricated either on the surface of silicon wafer or at the tip of needle-like tungsten by vapor-phase deposition.Both the plane field emission and tip field emission of ZnO nanowires are studied using a field emission microscope.The results show that for unoriented ZnO nanowire thin films,the electric field intensities corresponding to the turn-on voltage and threshold voltage of field emission are 4.7 and 7.6V/μm,which are much lower than those of aligned nanowire arrays.The enhancement of the field emission ability is attributed to the fact that the field-induced screening effect can be effectively avoided due to the widely spaced intervals that exist between the unoriented nanowires.The field emission of the tungsten tip also can be effectively improved by assembling ZnO nanowires on the tip,which presents a potential application of ZnO nanowire on the probe of electron microscopes with ultrahigh resolution.
Study of zinc tin oxide thin-film transistor

Xiong Wang,Cai Xi-Kun,Yuan Zi-Jian,Zhu Xia-Ming,Qiu Dong-Jiang,Wu Hui-Zhen

DOI: https://doi.org/10.7498/aps.60.037305

2011-01-01

Abstract:Thin film transistors with zinc tin oxide as the active channel layer were fabricated on ITO glass by rf magnetron sputtering. SiO 2 gate dielectric was grown using plasma-enhanced chemical vapor deposition (PECVD). These devices operate with a maximum field effect mobility of 9.1 cm 2/V · s, threshold voltage of -2 V, and current on/off ratio of 10 4. © 2011 Chinese Physical Society.
ZnO Nanowire and $\hbox{ws}_{2}$ Nanotube Electronics

Husnu Emrah Unalan,Yang,Yan Zhang,Pritesh Hiralal,Daniel Kuo,Sharvari Dalal,Tim Butler,Seung Nam Cha,Jae Eun Jang,Konstantina Chremmou,Georgios Lentaris,Di Wei,Rital Rosentsveig,Kenichi Suzuki,Hidetoshi Matsumoto,Mie Minagawa,Yasuhiko Hayashi,Manish Chhowalla,Akihiko Tanioka,William I. Milne,Reshef Tenne,Gehan A. J. Amaratunga

DOI: https://doi.org/10.1109/ted.2008.2005166

IF: 3.1

2008-01-01

IEEE Transactions on Electron Devices

Abstract:In this paper, we report on the synthesis and applications of semiconducting nanostructures. Nanostructures of interest were zinc oxide (ZnO) nanowires and tungsten disulfide (WS2) nanotubes where transistors/phototransistors and photovoltaic (PV) energy conversion cells have been fabricated. ZnO nanowires were grown with both high- and low-temperature approaches, depending on the application. Individual ZnO nanowire side-gated transistors revealed excellent performance with a field-effect mobility of 928 cm(2)/V . s. ZnO networks were proposed for large-area macroelectronic devices as a less lithographically intense alternative to individual nanowire transistors where mobility values in excess of 20 cm(2)/V . s have been achieved. Flexible PV devices utilizing ZnO nanowires as electron acceptors and for photoinduced charge separation and transport have been presented. Phototransistors were fabricated using individual WS2 nanotubes, where clear sensitivity to visible light has been observed. The results presented here simply reveal the potential use of inorganic nanowires/tubes for various optoelectronic devices.
Zno Nanowire Field Electron Emitters

Juncong She,Tao Cao,Shaozhi Deng,Jun Chen,Ningsheng Xu

DOI: https://doi.org/10.1109/ivnc.2015.7225564

2015-01-01

Abstract:This talk gives an overview on the precisely-controlled fabrication, optimization of the field electron emission performance, and the potential application of the zinc oxide nanoemitter arrays. The related nanofabrication methods, material and device physics are discussed.
Field Emission from Zinc Oxide Nanostructures and Its Degradation

Jing Xiao,Gengmin Zhang,Xin Bai,Ligang Yu,Xingyu Zhao,Dengzhu Guo

DOI: https://doi.org/10.1016/j.vacuum.2008.07.005

IF: 4

2008-01-01

Vacuum

Abstract:Arrays of zinc oxide (ZnO) nanowires and nanobelts were synthesized by the thermal evaporation of mixed powders of ZnO and graphite. Neither catalyst nor vacuum environment was involved in the fabrication. For comparison, the ZnO nanowires were grown on a pre-deposited transitional ZnO film on a brass substrate and the ZnO nanobelts were grown directly on a Si substrate. Their field emission properties were systematically measured. Current density of 10μA/cm2 was achieved at the fields of 5.7 and 6.2V/μm from the nanowires and nanobelts, respectively. Also, the emission sites were found to distribute uniformly on the whole cathode. In the preliminary test on the stability, the ZnO nanobelts, which were sharp at the tip but wide at the root, exhibited better robustness than the ZnO nanowires. The post-test scanning electron microscopy (SEM) observation showed that the degradation of their field emission capability resulted from the breaking of the nanowires, which was tentatively attributed to the resistive heating during the field emission. In contrast, the shedding of the ZnO from the substrate was not so serious as imagined.
Field Emission Microscopy Study of Zinc Oxide Nanowires on Tungsten Tip

Xianxiang Zhang,Gengmin Zhang,Xin Bai,Xingyu Zhao,Jing Xiao,Yue Wu,Fengyuan Lu,Dengzhu Guo

DOI: https://doi.org/10.1116/1.3079650

2009-01-01

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Abstract:This article focuses on the field emission from a small number of zinc oxide (ZnO) nanowires. ZnO nanowires were grown directly on W tips and their field emission was studied in a traditional field emission microscope (FEM). The FEM pattern of a single ZnO nanowire was ring shaped, indicating that most of the emission from the (0001) facets of the ZnO nanowires came from their circumferences. Scanning electron microscopy observation, measurement of dependence of the emission current on the applied cathode voltage (I-V behavior), and acquirement of FEM patterns were performed before and after heat treatment of the samples, respectively. The heat treatment was found to play either a favorable or an unfavorable role. It could lead to a stable emission or damage of the emitters, depending on the heating conditions.
Integration of ZnO Nanowires in Gated Field Emitter Arrays for Large-Area Vacuum Microelectronics Applications

Long Zhao,Yuxiang Chen,Yuanming Liu,Guofu Zhang,Juncong She,Shaozhi Deng,Ningsheng Xu,Jun Chen

DOI: https://doi.org/10.1016/j.cap.2016.11.004

IF: 2.856

2016-01-01

Current Applied Physics

Abstract:Addressable field emitter arrays (FEAs) have important applications in vacuum electronic devices. However, it is important to integrate nanowire emitters into a gated structure without influencing the device structure and maintain the excellent field emission properties of nanowire emitters in the FEAs after the fabrication process. In this study, gate-structure ZnO nanowire FEAs were fabricated by a microfabrication process. The structure combines a planar gate and an under-gate, which is compatible with the preparation of ZnO nanowire emitters. The effect of electrode materials on the field emission properties of ZnO nanowires was studied using a diode structure, and it was found that ZnO nanowire pads on indium-tin-oxide (ITO) electrode showed better field emission performance compared with chromium (Cr) electrode. In addition, effective emission current modulation by the gate voltage was achieved and the addressing capability was demonstrated by integrating the ZnO nanowire FEAs in a vacuum-encapsulated field emission display. The reported technique could be a promising route to achieve large area addressable FEAs.
Field Emission from Nonaligned Zinc Oxide Nanowires

GM Zhang,QF Zhang,Y Pei,LA Chen

DOI: https://doi.org/10.1016/j.vacuum.2004.06.005

IF: 4

2004-01-01

Vacuum

Abstract:Zinc oxide (ZnO) nanowires with an average diameter of 15nm were grown using a vapor phase transport process. Field emission was achieved from these nanowires in spite of their random orientation. The electric field for the extraction of a 10μA/cm2 current density was measured to range from 4.4 to 5.0V/μm, and that for a 1mA/cm2 current density from 7.6 to 8.7V/μm, depending on whether the sample was submitted to a heat treatment. The results exhibit the potential application of ZnO nanowires as field emitters in future flat panel displays.
Fabrication of Vertically Aligned Si Nanowires and Their Application in A Gated Field Emission Device

JC She,SZ Deng,NS Xu,RH Yao,J Chen

DOI: https://doi.org/10.1063/1.2162692

IF: 4

2006-01-01

Applied Physics Letters

Abstract:A technique involving a combination of using self-assembled nanomask and anisotropic plasma etching is developed for fabricating vertically aligned single-crystalline Si nanowires (SiNWs). The SiNWs are shown to have excellent field emission performance with the turn-on field as low as 0.8MV∕m and the threshold field being 5.0MV∕m. In addition, an emission current density of 442mA∕cm2 can be obtained at an applied field of ∼14MV∕m. The technique is easily employed to fabricate arrays of SiNW-based field emission microtriodes. Mechanisms are proposed to explain the formation of the SiNWs and the observed field emission properties.
Field Emission of One-Dimensional Micro- and Nanostructures of Zinc Oxide

Y. H. Yang,B. Wang,N. S. Xu,G. W. Yang

DOI: https://doi.org/10.1063/1.2234838

IF: 4

2006-01-01

Applied Physics Letters

Abstract:A variety of one-dimensional (1D) micro- and nanostructures of zinc oxide (ZnO) were self-assembled on amorphous carbons using thermal chemical vapor transport and condensation without any metal catalysts. The low turn-on electronic field and the higher current density were achieved on these 1D ZnO micro- and nanostructural emitters. It was found that the geometry of the micro- and nanostructural emitters plays a crucial role in the field emission of ZnO.

Study of vacuum microelectronic device using zinc oxide nanowires by low temperature solution phase method

Pulsed-laser Treatment for Lowering Resistance and Enhancing Field Emission of Solution-Grown ZnO Nanowires

Stable, Self-Ballasting Field Emission from Zinc Oxide Nanowires Grown on an Array of Vertically Aligned Carbon Nanofibers

Field Emission From a MOSFET-Controlled ZnO-Nanowire Cold Cathode

Fabrication and Characterization of Gated ZnO Nanowire Field Electron Emitters

Synthesis of ZnO Nanowires for Thin Film Network Transistors

Zinc Oxide Nanowire Networks for Macroelectronic Devices

Fabrication of Large-Area Arrays of Coaxial Gated ZnO Nanowire Field Emitters for Vacuum Microelectronics Applications

Field Emission Properties of Zinc Oxide Nanowires Fabricated by Thermal Evaporation

Tuning the Electrical Properties of Zno-Si Nano-Contacts and Its Effect on Field Electron Emission from Zno Nanowires

Realization and characterization of nano electromechanical devices based on ZnO nanowires

Fabrication of ZnO Nanowires by Vapor-Phase Deposition and Their Field Emission Properties

Study of zinc tin oxide thin-film transistor

ZnO Nanowire and $\hbox{ws}_{2}$ Nanotube Electronics

Zno Nanowire Field Electron Emitters

Field Emission from Zinc Oxide Nanostructures and Its Degradation

Field Emission Microscopy Study of Zinc Oxide Nanowires on Tungsten Tip

Integration of ZnO Nanowires in Gated Field Emitter Arrays for Large-Area Vacuum Microelectronics Applications

Field Emission from Nonaligned Zinc Oxide Nanowires

Fabrication of Vertically Aligned Si Nanowires and Their Application in A Gated Field Emission Device

Field Emission of One-Dimensional Micro- and Nanostructures of Zinc Oxide