Abstract:Numerical study on the influence of the carrier gas (H 2 and N 2 ), V/III ratio, inlet temperature, and pressure on gas reaction path and growth rate of indium nitride (InN) thin film in metal–organic chemical vapor deposition (MOCVD) with close-coupled showerhead (CCS) reactor was conducted. It was found that the concentrations of precursor for InN film and nanoparticle determine the growth rate and gas reaction path. InN exhibits greater difficulty in undergoing pyrolysis reactions compared to AlN and GaN. Under the conditions of this study, the gas reaction path of InN-MOCVD be dominated by adduct/amide formation path. When H 2 is used as the carrier gas, the effect of H radicals on gas reactions is relatively minor, while the effect of NH 2 radicals generates more nanoparticles, and significant changes in flow fields are observed compared to using N 2 as the carrier gas. Under the conditions of low V/III ratio, low inlet temperature, high pressure, and low gas flow rate, the growth rate is relatively high, but the growth uniformity is decreased. There are different reasons for the effects of the above parameters, such as, altering TMIn flow to change V/III ratio and precursor concentration, varying temperature gradient due to changes in inlet temperature, and increased the particle collision frequency and residence time due to high pressure and low gas flow rate.

Suppression of Indium Droplet Formation by Adding CCl4during Metalorganic Chemical Vapor Deposition Growth of InN Films

Increasing the Indium Incorporation Efficiency During Ingan Layer Growth by Suppressing the Dissociation of Nh3

Numerical simulation study on growth rate and gas reaction path of InN-MOCVD with Close-Coupled showerhead reactor

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Synthesis and Growth of InN with Pre-deposited Indium Nanodots Method on MOCVD at Low Temperature

Initial Stages of the Cubic-Inn Growth with the Technique of the Pre-Deposition of Indium

Ga-free AlInN films growth by close-coupled showerhead metalorganic chemical vapor deposition

Effect of Indium Droplets on Growth of InGaN Film by Molecular Beam Epitaxy

Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping

Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition

Catalyst Synthesis and Growth of Indium Nitride Nanodots

Investigation on the corrosive effect of NH 3 during InGaN/GaN multi-quantum well growth in light emitting diodes

Chemical Vapor Deposition Growth of Inn Nanostructures: Morphology Regulation and Field Emission Properties

Smooth Etching of Epitaxially Grown AlN Film by Cl2/BCl3/Ar-based Inductively Coupled Plasma

Effect of Indium-Doped Interlayer on the Strain Relief in GaN Films Grown on Si(111)

Mocvd Growth of Inn Using A Gan Buffer

The Influence of Growth Temperature and Input V/III Ratio on the Initial Nucleation and Material Properties of InN on GaN by MOCVD

Low-temperature growth of cubic GaN by metalorganic chemical-vapor deposition

MOCVD Growth of InN Films on Sapphire Substrates

Effects of Surface Treatments on Hexagonal InN Films Grown on Sapphire Substrates

Enhancing indium bilayer nitridation through novel hydrogen insertion process in InN epitaxy: A kinetic mechanism