Growth of AIN on Etched 6H-Sic(0001) Substrates Via MOCVD
W Hageman,Z Xie,J Edgar,D Zhuang,S Jagganathan,K Barghout,J Chaudhuri,A Rys,J Schmitt
DOI: https://doi.org/10.1002/1521-396x(200112)188:2<783::aid-pssa783>3.3.co;2-n
2001-01-01
Abstract:physica status solidi (a)Volume 188, Issue 2 p. 783-787 Original Paper Growth of AIN on Etched 6H-SiC(0001) Substrates via MOCVD W. Hageman, W. Hageman eeyore@ksu.edu Department of Electrical Engineering, Kansas State University, Manhattan, KS 66506, USASearch for more papers by this authorZ. Xie, Z. Xie Department of Chemical Engineering, Kansas State University, Manhattan, KS 66506, USASearch for more papers by this authorJ. Edgar, J. Edgar Department of Chemical Engineering, Kansas State University, Manhattan, KS 66506, USASearch for more papers by this authorD. Zhuang, D. Zhuang Department of Chemical Engineering, Kansas State University, Manhattan, KS 66506, USASearch for more papers by this authorS. Jagganathan, S. Jagganathan Department of Mechanical Engineering, Wichita State University, Wichita, KS 67208, USASearch for more papers by this authorJ. Chaudhuri, J. Chaudhuri Department of Mechanical Engineering, Wichita State University, Wichita, KS 67208, USASearch for more papers by this authorA. Rys, A. Rys Department of Electrical Engineering, Kansas State University, Manhattan, KS 66506, USASearch for more papers by this authorJ. Schmitt, J. Schmitt Department of Electrical Engineering, Kansas State University, Manhattan, KS 66506, USASearch for more papers by this author W. Hageman, W. Hageman eeyore@ksu.edu Department of Electrical Engineering, Kansas State University, Manhattan, KS 66506, USASearch for more papers by this authorZ. Xie, Z. Xie Department of Chemical Engineering, Kansas State University, Manhattan, KS 66506, USASearch for more papers by this authorJ. Edgar, J. Edgar Department of Chemical Engineering, Kansas State University, Manhattan, KS 66506, USASearch for more papers by this authorD. Zhuang, D. Zhuang Department of Chemical Engineering, Kansas State University, Manhattan, KS 66506, USASearch for more papers by this authorS. Jagganathan, S. Jagganathan Department of Mechanical Engineering, Wichita State University, Wichita, KS 67208, USASearch for more papers by this authorJ. Chaudhuri, J. Chaudhuri Department of Mechanical Engineering, Wichita State University, Wichita, KS 67208, USASearch for more papers by this authorA. Rys, A. Rys Department of Electrical Engineering, Kansas State University, Manhattan, KS 66506, USASearch for more papers by this authorJ. Schmitt, J. Schmitt Department of Electrical Engineering, Kansas State University, Manhattan, KS 66506, USASearch for more papers by this author First published: 23 November 2001 https://doi.org/10.1002/1521-396X(200112)188:2<783::AID-PSSA783>3.0.CO;2-WCitations: 4AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Abstract The effects of H2 etching on 6H-SiC(0001) substrate morphology and the crystal quality of subsequently grown AlN films have been studied. Etching removes polishing damage and produces step structures on the substrate surface. The properties of these steps subsequently influence the quality of epitaxial AlN layers. Citing Literature Volume188, Issue2December 2001Pages 783-787 RelatedInformation