Abstract:Ultrafast thermomechanical responses of silicon thin films due to ultrashort-pulsed laser irradiation were investigated using an atomic-level hybrid method coupling the molecular dynamics and the ultrafast two-step energy transport model. The dynamic reflectivity and absorption were considered, and the effects of laser fluence and pulse duration on the thermomechanical response were studied. It was found that both the carrier temperature and number density rapidly increase to their maximum while the lattice temperature rises at a much slower rate. The ultrafast laser heating could induce a strong stress wave in the film, with the maximum compressive and tensile stress occurring near the front and back surfaces, respectively. For laser pulses of the same duration, the higher the laser fluence is, the higher the carrier temperature and density and lattice temperature are induced. For the same laser fluence, a longer pulse generally produces lower carrier density and temperatures and weaker stress shock strength. However, for the fluence of 0.2 J/cm(2), the lowest lattice temperature was simulated for a 100-fs pulse compared to the 1-ps and 5-ps pulses, due to the increase of reflectivity by high carrier density. It is also shown that the optical properties as functions of lattice temperature usually employed are not suited for modeling ultrafast laser interactions with silicon materials.

Transient phase change in picosecond laser pulse-driven crystallization process of as-deposited amorphous thin films

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Dynamics of Ultrafast Crystallization in As-Deposited Ge2sb2te5 Films

Picosecond laser pulse-driven crystallization behavior of SiSb phase change memory thin films

Femtosecond Laser Pulse Induced Phase Transition of Cr-Doped Sb2te1 Films Studied with A Pump-Probe System

Observation of Crystallization in Amorphous Phase Change Films Induced by Femtosecond Laser Pulses

Fast Phase Transition Process of Ge2sb2te5 Film Induced by Picosecond Laser Pulses with Identical Fluences

Optical–electrical Properties of AgInSbTe Phase Change Thin Films under Single Picosecond Laser Pulse Irradiation

Femtosecond Laser-induced Crystallization of Amorphous Sb2Te3 film and Coherent Phonon Spectroscopy Characterization and Optical Injection of Electron Spins

An Explanation of the Crystallization of Amorphous Ge2sb2te5 Films Induced by A Short Gaussian Laser Pulse

Laser Induced Crystallization of As-Deposited Amorphous Ge2Sb2Te5 Films

Molecular Dynamics Simulations of Pulsed Laser Crystallization of Amorphous Silicon Ultrathin Films

Crystallization mechanism and course of the Ge2Sb2Te5 thin films under focused pulse laser

Properties of Crystallization for As-Deposited Ag11In12Sb51Te26 Phase Change Thin Films Irradiation upon Blue-Green Laser

Optical–electrical Hybrid Operation with Amorphous Ge 1 Sb 4 Te 7 Phase Change Thin Films

Atomic-Level Study of A Thickness-Dependent Phase Change in Gold Thin Films Heated by an Ultrafast Laser

Dynamical Process of Krf Pulsed Excimer Laser Crystallization of Ultrathin Amorphous Silicon Films to Form Si Nano-Dots

Light intensity distribution in laser interference crystallization by using a phase-shift grating and Talbot Effect

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Crystallization of Amorphous Ge2Sb2Te5 Films Induced by a Single Femtosecond Laser Pulse