Abstract:A novel high performance trench field stop (TFS) superjunction (SJ) insulated gate bipolar transistor (IGBT) with a buried oxide (BO) layer is proposed in this paper. The BO layer inserted between the P-base and the SJ drift region acts as a barrier layer for the hole-carrier in the drift region. Therefore, conduction modulation in the emitter side of the SJ drift region is enhanced significantly and the carrier distribution in the drift region is optimized for the proposed structure. As a result, compared with the conventional TFS SJ IGBT (Conv-SJ), the proposed BO-SJ IGBT structure possesses a drastically reduced on-state voltage drop (Vce(on)) and an improved tradeoff between Vce(on) and turn-off loss (Eoff), with no breakdown voltage (BV) degraded. The results show that with the spacing between the gate and the BO layer Wo = 0.2 μm, the thickness of the BO layer Lo = 0.2 μm, the thickness of the drift region Ld = 90 μm, the half width and doping concentration of the N- and P-pillars Wn = Wp = 2.5 μm and Nn = Np = 3 × 10 cm−3, the Vce(on) and Eoff of the proposed structure are 1.08 V and 2.81 mJ/cm2 with the collector doping concentration Nc = 1 × 1018 cm−3 and 1.12 V and 1.73 mJ/cm2 with Nc = 5 × 1017 cm−3, respectively. However, with the same device parameters, the Vce(on) and Eoff for the Conv-SJ are 1.81 V and 2.88 mJ/cm2 with Nc = 1 × 1018 cm−3 and 1.98 V and 2.82 mJ/cm2 with Nc = 5 × 10 cm−3, respectively. Meanwhile, the BV of the proposed structure and Conv-SJ are 1414 V and 1413 V, respectively.

Novel Structure Of 4h-Sic Bipolar Junction Transistor

Novel 4h‐sic BJT Utilizing Floating Buried Layer in Base for High Current Gain, High Current Gain Stability and High Breakdown Voltage

A novel structure of a high current gain 4H-SiC BJT with a buried layer in the base

A Novel 4H-Sic Lateral Bipolar Junction Transistor Structure with High Voltage and High Current Gain

High Current Gain 4H-Sic Bipolar Junction Transistor

4H-Sic BJTs with Epitaxial Junction Termination Composite Structure

Novel 4H-SiC bipolar junction transistor (BJT) with improved current gain

A Novel High-Voltage Trench Gate Insulated Gate Bipolar Transistor With Diffusion Remnant Layer

Research on an Improved Junction Termination Structure for 4H-SiC BJTs

A New Method of Improving the Current Gain of 4H-SiC Lateral BJTs

High Current Gain 4H-Sic BJT for Limiting Surface States Effect

Silicon Carbide Bipolar Junction Transistor with Novel Emitter Field Plate Design for High Current Gain and Reliability

A novel 4H-SiC IGBT structure with improved trade-off between short circuit capability and on-state voltage drop

4H-SiC Trench MOSFET With Floating/Grounded Junction Barrier-controlled Gate Structure

A novel high-performance junctionless 4H-SiC trench MOSFET with improved switching characteristics

Investigation of a 4H-SiC Trench MOSFET with Back-Side Super Junction

A Novel High Performance TFS SJ IGBT with a Buried Oxide Layer

Low Turn-Off Loss 4H-Sic Insulated Gate Bipolar Transistor with a Trench Heterojunction Collector

A Novel 1200-V LDMOSFET with Floating Buried Layer in Substrate

A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

Enhanced Conduction Characteristics in SiC IGBT with Floating P-Grid Shielded Thick Current Storage Layer